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BCX52TF

Public Made by Adom

by adom

Nexperia Bipolar Transistors - BJT, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCX52TF

Nexperia · Bipolar Transistors - BJT · SOT-89-3

BCX52TF from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the PNP transistor; VEBO limit is -5 V (open collector).
2 C passive Collector of the PNP transistor; IC max -1 A, ICM -2 A (tp ≤ 1 ms), VCEO -60 V.
3 B passive Base of the PNP transistor; IB max -200 mA, IBM -300 mA (tp ≤ 1 ms).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO -60 V open base 3
Collector-base voltage VCBO -60 V open emitter 3
Emitter-base voltage VEBO -5 V open collector 3
Collector current IC -1 A 3
Peak collector current ICM -2 A single pulse; tp ≤ 1 ms 3
Base current IB -200 mA 3
Peak base current IBM -300 mA single pulse; tp ≤ 1 ms 3
Total power dissipation (standard footprint) Ptot 500 mW Tamb ≤ 25 °C; FR4 PCB standard footprint 3
Total power dissipation (1 cm2 pad) Ptot 800 mW Tamb ≤ 25 °C; FR4 PCB, collector pad 1 cm2 3
Total power dissipation (6 cm2 pad) Ptot 1100 mW Tamb ≤ 25 °C; FR4 PCB, collector pad 6 cm2 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient (standard footprint) Rth(j-a) 250 K/W free air; FR4 PCB standard footprint 4
Thermal resistance junction to ambient (1 cm2 pad) Rth(j-a) 157 K/W free air; FR4 PCB, collector pad 1 cm2 4
Thermal resistance junction to ambient (6 cm2 pad) Rth(j-a) 114 K/W free air; FR4 PCB, collector pad 6 cm2 4
Collector-base breakdown voltage V(BR)CBO -60 V IC = -100 µA; IE = 0 A 5
Collector-emitter breakdown voltage V(BR)CEO -60 V IC = -2 mA; IE = 0 A 5
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -100 µA; IC = 0 A 5
Collector-base cut-off current ICBO -100 nA VCB = -30 V; IE = 0 A 5
Collector-base cut-off current ICBO -10 μA VCB = -30 V; IE = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A 5
DC current gain hFE 63 VCE = -2 V; IC = -5 mA 5
DC current gain hFE 40 VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
DC current gain (BCX52T) hFE 63 250 VCE = -2 V; IC = -150 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
Collector-emitter saturation voltage VCEsat -500 mV IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
Base-emitter voltage VBE -1 V VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
Transition frequency fT 140 MHz VCE = -5 V; IC = -50 mA; f = 100 MHz 5
Collector capacitance Cc 7 pF VCB = -10 V; IE = ie = 0 A; f = 1 MHz 5

CAD (KiCad official)

  • Symbol: BCX52TF
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: bcx52tf-etched.step / bcx52tf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcx52tf.step / bcx52tf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 d2285d7d98426b97, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF