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Contents

README

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BCX52-16

Changjing · Bipolar Transistors - BJT · SOT-89-3L

BCX52-16 from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor (BCX52-16 family), which drives the device; the datasheet gives a base-emitter saturation condition of IB=-50mA at IC=-0.5A and VBE of -1V max at VCE=-2V, IC=-0.5A.
2 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet rates it at VCBO -60V and VCEO -60V for BCX52, with IC limited to -1A and PC of 500mW.
3 EMITTER passive Emitter terminal of the PNP transistor; the datasheet rates the emitter-base voltage VEBO at -5V.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-89-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -60 V IC=-100µA, IE=0 (BCX52 column) 2
Collector-emitter breakdown voltage V(BR)CEO -60 V IC=-10mA, IB=0 (BCX52 column), pulse test 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100µA, IC=0 2
Collector cut-off current ICBO -0.1 µA VCB=-30V, IE=0 2
Emitter cut-off current IEBO -0.1 µA VEB=-5V, IC=0 2
DC current gain hFE(1) hFE(1) 63 VCE=-2V, IC=-5mA, pulse test 2
DC current gain hFE(2) hFE(2) 63 250 VCE=-2V, IC=-150mA, pulse test (table row as printed; see review for -16 rank) 2
DC current gain hFE(3) hFE(3) 40 VCE=-2V, IC=-0.5A, pulse test 2
Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-0.5A, IB=-50mA, pulse test 2
Base-emitter voltage VBE -1 V VCE=-2V, IC=-0.5A, pulse test 2
Transition frequency fT 50 MHz VCE=-5V, IC=-10mA, f=100MHz 2
Collector-base voltage VCBO -60 V Ta=25℃ (BCX52 value) 1
Collector-emitter voltage VCEO -60 V Ta=25℃ (BCX52 value) 1
Emitter-base voltage VEBO -5 V Ta=25℃ 1
Collector current IC -1 A Ta=25℃ 1
Collector power dissipation PC 500 mW Ta=25℃ 1
Thermal resistance, junction to ambient RθJA 250 ℃/W Ta=25℃ 1
Operating junction and storage temperature range TJ,Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: BCX52-16
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3L (KiCad packages3D, STEP)
  • 3D model files: bcx52-16-etched.step / bcx52-16-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcx52-16.step / bcx52-16.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 da3e1f77f77bb356, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF