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BCX19T116

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCX19T116

ROHM Semicon · Bipolar (BJT) · SOT-23

BCX19T116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the NPN transistor; emitter-base voltage VEBO max 5 V.
2 B passive Base of the NPN transistor; emitter-base breakdown voltage BVEBO min 5 V at IE = 50 µA.
3 C passive Collector of the NPN transistor; VCES 50 V, VCEO 45 V, continuous IC 500 mA (ICP 1 A pulsed).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage BVCES 50 V IC = 50μA 2
Collector-emitter breakdown voltage BVCEO 45 V IC = 10mA 2
Emitter-base breakdown voltage BVEBO 5 V IE = 50μA 2
Collector cut-off current ICBO 100 nA VCB = 20V 2
Collector cut-off current ICBO 5 μA VCB = 20V, Ta = 150℃ 2
Emitter cut-off current IEBO 10 μA VEB = 5V 2
Collector-emitter saturation voltage VCE(sat) 620 mV IC = 500mA, IB = 50mA 2
Base-emitter turn on voltage VBE(on) 1.2 V VCE = 1V, IC = 500mA 2
DC current gain hFE1 100 600 VCE = 1V, IC = 100mA 2
DC current gain hFE2 70 VCE = 1V, IC = 300mA 2
DC current gain hFE3 40 VCE = 1V, IC = 500mA 2
Collector-emitter voltage VCES 50 V Ta = 25°C 2
Collector-emitter voltage VCEO 45 V Ta = 25°C 2
Emitter-base voltage VEBO 5 V Ta = 25°C 2
Collector current IC 500 mA Ta = 25°C 2
Collector current (pulse) ICP 1 A Ta = 25°C 2
Power dissipation PD*1 200 mW Each terminal mounted on a reference land 2
Power dissipation PD*2 350 mW Mounted on a ceramic board (7.0×5.0×0.6mm) 2
Power dissipation PD*3 425 mW Mounted on a ceramic board (15×15×0.6mm) 2
Junction temperature Tj 150 ℃ Ta = 25°C 2
Range of storage temperature Tstg -65 150 ℃ Ta = 25°C 2

CAD (KiCad official)

  • Symbol: BCX19T116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcx19t116-etched.step / bcx19t116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcx19t116.step / bcx19t116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (8 pp, sha256 ad784f9fa675f368, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF