component
BCX17LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BCX17LT1G
onsemi · Bipolar (BJT) · SOT-23
BCX17LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the transistor; the datasheet specifies base drive only through test conditions, such as IB = 50 mAdc at IC = 500 mAdc for VCE(sat). |
| 2 | EMITTER | passive | Emitter terminal; the emitter-base voltage is rated at VEBO = 5.0 Vdc maximum. |
| 3 | COLLECTOR | passive | Collector terminal; rated VCEO 45 Vdc (BCX17/BCX19) or 25 Vdc (BCX18), VCBO 50 Vdc or 30 Vdc, and continuous collector current IC 500 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BCX17) | V(BR)CEO | 45 | Vdc | IC = 10 mAdc, IB = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage (BCX17) | V(BR)CES | 50 | Vdc | IC = 10 Adc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 100 | nAdc | VCB = 20 Vdc, IE = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 5 | Adc | VCB = 20 Vdc, IE = 0, TA = 150°C | 2 | ||
| Emitter Cutoff Current | IEBO | 10 | Adc | VEB = 5.0 Vdc, IC = 0 | 2 | ||
| DC Current Gain | hFE | 100 | 600 | IC = 100 mAdc, VCE = 1.0 Vdc | 2 | ||
| DC Current Gain | hFE | 70 | IC = 300 mAdc, VCE = 1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 40 | IC = 500 mAdc, VCE = 1.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.62 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 2 | ||
| Base-Emitter On Voltage | VBE(on) | 1.2 | Vdc | IC = 500 mAdc, VCE = 1.0 Vdc | 2 | ||
| Collector-Emitter Voltage (BCX17, BCX19) | VCEO | 45 | Vdc | 1 | |||
| Collector-Base Voltage (BCX17, BCX19) | VCBO | 50 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | Vdc | 1 | |||
| Collector Current - Continuous | IC | 500 | mAdc | 1 | |||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 1 | ||
| Derate above 25°C (FR-5 Board) | PD | 1.8 | mW/°C | Derate above 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W | FR-5 Board (Note 1) | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 | ||
| Derate above 25°C (Alumina Substrate) | PD | 2.4 | mW/°C | Derate above 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 417 | °C/W | Alumina Substrate (Note 2) | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
BCX17LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bcx17lt1g-etched.step/bcx17lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx17lt1g.step/bcx17lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
239bfa6b037c5532, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BCX17LT1G
**onsemi** · Bipolar (BJT) · SOT-23
BCX17LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the transistor; the datasheet specifies base drive only through test conditions, such as IB = 50 mAdc at IC = 500 mAdc for VCE(sat). |
| 2 | EMITTER | passive | Emitter terminal; the emitter-base voltage is rated at VEBO = 5.0 Vdc maximum. |
| 3 | COLLECTOR | passive | Collector terminal; rated VCEO 45 Vdc (BCX17/BCX19) or 25 Vdc (BCX18), VCBO 50 Vdc or 30 Vdc, and continuous collector current IC 500 mAdc. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BCX17) | V(BR)CEO | 45 | | | Vdc | IC = 10 mAdc, IB = 0 | 2 |
| Collector-Emitter Breakdown Voltage (BCX17) | V(BR)CES | 50 | | | Vdc | IC = 10 Adc, IC = 0 | 2 |
| Collector Cutoff Current | ICBO | | | 100 | nAdc | VCB = 20 Vdc, IE = 0 | 2 |
| Collector Cutoff Current | ICBO | | | 5 | Adc | VCB = 20 Vdc, IE = 0, TA = 150°C | 2 |
| Emitter Cutoff Current | IEBO | | | 10 | Adc | VEB = 5.0 Vdc, IC = 0 | 2 |
| DC Current Gain | hFE | 100 | | 600 | | IC = 100 mAdc, VCE = 1.0 Vdc | 2 |
| DC Current Gain | hFE | 70 | | | | IC = 300 mAdc, VCE = 1.0 Vdc | 2 |
| DC Current Gain | hFE | 40 | | | | IC = 500 mAdc, VCE = 1.0 Vdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.62 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 2 |
| Base-Emitter On Voltage | VBE(on) | | | 1.2 | Vdc | IC = 500 mAdc, VCE = 1.0 Vdc | 2 |
| Collector-Emitter Voltage (BCX17, BCX19) | VCEO | | | 45 | Vdc | | 1 |
| Collector-Base Voltage (BCX17, BCX19) | VCBO | | | 50 | Vdc | | 1 |
| Emitter-Base Voltage | VEBO | | | 5 | Vdc | | 1 |
| Collector Current - Continuous | IC | | | 500 | mAdc | | 1 |
| Total Device Dissipation (FR-5 Board) | PD | | | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 1 |
| Derate above 25°C (FR-5 Board) | PD | | | 1.8 | mW/°C | Derate above 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | | | 556 | °C/W | FR-5 Board (Note 1) | 1 |
| Total Device Dissipation (Alumina Substrate) | PD | | | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 |
| Derate above 25°C (Alumina Substrate) | PD | | | 2.4 | mW/°C | Derate above 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | | | 417 | °C/W | Alumina Substrate (Note 2) | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `BCX17LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bcx17lt1g-etched.step` / `bcx17lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcx17lt1g.step` / `bcx17lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885167557783552) (5 pp, sha256 `239bfa6b037c5532`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bcx17lt1g-datasheet.pdf)