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BCW72LT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW72LT1G

onsemi · Bipolar Transistors - BJT · SOT-23

BCW72LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 5.0 Vdc maximum.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet rates continuous collector current IC at 100 mAdc maximum.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet rates collector-emitter voltage VCEO at 45 Vdc and collector-base voltage VCBO at 50 Vdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 45 Vdc 1
Collector-Base Voltage VCBO 50 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current - Continuous IC 100 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient FR-5 Board RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient Alumina Substrate RJA 417 °C/W Alumina Substrate (Note 2) 1
Collector-Emitter Breakdown Voltage V(BR)CEO 45 Vdc IC = 2.0 mAdc, VEB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICBO 100 nAdc VCB = 20 Vdc, IE = 0 2
Collector Cutoff Current ICBO 10 Adc VCB = 20 Vdc, IE = 0, TA = 100°C 2
DC Current Gain hFE 200 450 IC = 2.0 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.21 Vdc IC = 10 mAdc, IB = 0.5 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 50 mAdc, IB = 2.5 mAdc 2
Base-Emitter On Voltage VBE(on) 0.6 0.75 Vdc IC = 2.0 mAdc, VCE = 5.0 Vdc 2
Output Capacitance Cobo 4 pF IE = 0, VCB = 10 Vdc, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2

CAD (KiCad official)

  • Symbol: BCW72LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw72lt1g-etched.step / bcw72lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw72lt1g.step / bcw72lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 1522103a4cb74667, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF