component
BCW72-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| bcw72-hxy-etched.glb | 8d ago |
| bcw72-hxy-etched.step | 8d ago |
| bcw72-hxy-hero.glb | 8d ago |
| bcw72-hxy-hero.overlay.json | 8d ago |
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| bcw72-hxy.lbr | 8d ago |
| bcw72-hxy.step | 8d ago |
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| page.json | 8d ago |
| README.md | 8d ago |
BCW72-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
BCW72-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, and the device-level emitter-base voltage VEBO is rated 6 V. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; device-level limits apply, including emitter-base voltage VEBO of 6 V and collector current IC of 100 mA. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; device-level limits apply, including collector-emitter voltage VCEO of 45 V, collector-base voltage VCBO of 50 V and collector current IC of 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC=10µA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 45 | V | IC=10mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10µA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB=50V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB=5V, IC=0 | 2 | ||
| DC current gain | hFE | 200 | 450 | VCE=5V, IC=2mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=100mA, IB=5mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.1 | V | 2 | |||
| Transition frequency | fT | 100 | MHz | VCE=5V, IC=10mA, f=30MHz | 2 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB=10V, f=1MHz | 2 | ||
| Collector-base voltage | VCBO | 50 | V | 1 | |||
| Collector-emitter voltage | VCEO | 45 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current | IC | 100 | mA | 1 | |||
| Collector power dissipation | PC | 200 | mW | 1 | |||
| Thermal resistance, junction to ambient | RΘJA | 625 | ℃/W | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
BCW72-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bcw72-hxy-etched.step/bcw72-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcw72-hxy.step/bcw72-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
6a3f26cd781687f7, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).