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Contents

README

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BCW72

Nexperia · Bipolar (BJT) · SOT-23

BCW72 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 base input Base terminal of the BCW72 NPN transistor; the datasheet limits the peak base current IBM to 200 mA and the emitter-base voltage VEBO to 5 V (open collector).
2 emitter passive Emitter terminal of the BCW72 NPN transistor; the emitter-base voltage is limited to VEBO = 5 V maximum with the collector open.
3 collector passive Collector terminal of the BCW72 NPN transistor; the datasheet limits DC collector current IC to 100 mA and collector-emitter voltage VCEO to 45 V (open base, IC = 2 mA).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage (open emitter) VCBO 50 V open emitter 3
collector-emitter voltage (open base) VCEO 45 V open base; IC = 2 mA 3
emitter-base voltage (open collector) VEBO 5 V open collector 3
collector current (DC) IC 100 mA 3
peak collector current ICM 200 mA 3
peak base current IBM 200 mA 3
total power dissipation Ptot 250 mW Tamb ≤ 25 °C 3
storage temperature Tstg -65 150 °C 3
junction temperature Tj 150 °C 3
operating ambient temperature Tamb -65 150 °C 3
thermal resistance from junction to ambient Rth j-a 500 K/W note 1: transistor mounted on an FR4 printed-circuit board 4
collector cut-off current ICBO 100 nA IE = 0; VCB = 20 V 4
collector cut-off current ICBO 10 μA IE = 0; VCB = 20 V; Tj = 100 °C 4
emitter cut-off current IEBO 100 μA IC = 0; VEB = 5 V 4
DC current gain (BCW72) hFE 200 450 IC = 2 mA; VCE = 5 V 4
collector-emitter saturation voltage VCEsat 120 250 mV IC = 10 mA; IB = 0.5 mA 4
base-emitter voltage VBE 550 700 mV IC = 2 mA; VCE = 5 V 4
transition frequency fT 100 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz 4
noise figure F 10 dB IC = 200 μA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4

CAD (KiCad official)

  • Symbol: BCW72
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw72-etched.step / bcw72-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw72.step / bcw72.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 17970b7d1101737a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF