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BCW70LT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW70LT1G

onsemi · Bipolar Transistors - BJT · SOT-23

BCW70LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP general-purpose transistor, with the emitter-base voltage rated at −5.0 Vdc (VEBO) as a maximum rating.
2 EMITTER passive Emitter terminal of the PNP transistor, with the emitter-base voltage rated at −5.0 Vdc (VEBO) as a maximum rating.
3 COLLECTOR passive Collector terminal of the PNP transistor, with maximum ratings of −45 Vdc collector-emitter voltage (VCEO) and −100 mAdc continuous collector current (IC).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -45 Vdc IC = −2.0 mAdc, IB = 0 2
Collector-Emitter Breakdown Voltage V(BR)CES -50 Vdc IC = −100 Adc, VEB = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 Vdc IE = −10 Adc, IC = 0 2
Collector Cutoff Current ICBO -100 nAdc VCB = −20 Vdc, IE = 0 2
Collector Cutoff Current ICBO -10 Adc VCB = −20 Vdc, IE = 0, TA = 100°C 2
DC Current Gain hFE 215 500 − IC = −2.0 mAdc, VCE = −5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 Vdc IC = −10 mAdc, IB = −0.5 mAdc 2
Base-Emitter On Voltage VBE(on) -0.6 -0.75 Vdc IC = −2.0 mAdc, VCE = −5.0 Vdc 2
Output Capacitance Cobo 7 pF IE = 0, VCB = −10 Vdc, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2
Collector-Emitter Voltage VCEO -45 Vdc 1
Emitter-Base Voltage VEBO -5 Vdc 1
Collector Current - Continuous IC -100 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation, FR-5 Board PD 225 mW TA = 25°C (Note 1, FR-5 board) 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RJA 556 °C/W FR-5 board (Note 1) 1
Total Device Dissipation, Alumina Substrate PD 300 mW TA = 25°C (Note 2, alumina substrate) 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RJA 417 °C/W Alumina substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: BCW70LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw70lt1g-etched.step / bcw70lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw70lt1g.step / bcw70lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 dd40095e31057a3f, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF