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Contents

README

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BCW68H-TP

MCC(Micro Commercial Components) · Bipolar Transistors - BJT · SOT-23

BCW68H-TP from MCC(Micro Commercial Components), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; limits: VEBO -5 V, continuous base current IB -100 mA, peak base current IBM -200 mA.
2 EMITTER passive Emitter of the PNP transistor; emitter-base voltage VEBO is limited to -5 V.
3 COLLECTOR passive Collector of the PNP transistor; limits: VCBO -60 V, VCEO -45 V, continuous collector current IC -800 mA, peak ICM -1000 mA.

Key specifications

Parameter Value
Manufacturer MCC(Micro Commercial Components)
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10µA, IE=0 2
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC=-10mA, IB=0 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA, IC=0 2
Collector-Base Cutoff Current ICBO -20 nA VCB=-45V, IE=0 2
Collector-Base Cutoff Current ICBO -20 µA VCB=-45V, IE=0, TA=150°C 2
Emitter-Base Cutoff Current IEBO -20 nA VEB=-4V, IC=0 2
DC Current Gain hFE(1) 180 VCE=-1V, IC=-10mA 2
DC Current Gain hFE(2) 250 630 VCE=-2V, IC=-100mA 2
DC Current Gain hFE(3) 100 VCE=-2V, IC=-500mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC=-100mA, IB=-10mA 2
Collector-Emitter Saturation Voltage VCE(sat) -1 V IC=-500mA, IB=-50mA 2
Base-Emitter Saturation Voltage VBE(sat) -1.25 V IC=-100mA, IB=-10mA 2
Base-Emitter Saturation Voltage VBE(sat) -2 V IC=-500mA, IB=-50mA 2
Transition Frequency fT 100 MHz VCE=-10V, IC=-20mA, f=100MHz 2
Collector-Base Capacitance CCB 6 pF VCB=-10V, f=1MHz 2
Emitter-Base Capacitance CEB 60 pF VEB=-0.5V, f=1MHz 2
Collector-Base Voltage VCBO -60 V @ 25°C 1
Collector-Emitter Voltage VCEO -45 V @ 25°C 1
Emitter-Base Voltage VEBO -5 V @ 25°C 1
Continuous Collector Current IC -800 mA @ 25°C 1
Peak Collector Current ICM -1000 mA @ 25°C 1
Continuous Base Current IB -100 mA @ 25°C 1
Peak Base Current IBM -200 mA @ 25°C 1
Power Dissipation PD 330 mW @ 25°C; TS=79°C 1
Operating Junction Temperature Range -55 150 °C 1
Storage Temperature Range -55 150 °C 1
Thermal Resistance Junction to Ambient 285 ℃/W Junction to Ambient (Note 2) 1
Thermal Resistance Junction to Soldering Point 215 ℃/W Junction to Soldering Point 1

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: BCW68H-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: bcw68h-tp-etched.step / bcw68h-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw68h-tp.step / bcw68h-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC(Micro Commercial Components) datasheet (4 pp, sha256 cd709a988fc9b0b6, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF