component
BCW68GVL
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCW68GVL
Nexperia · Bipolar Transistors - BJT · SOT-23
BCW68GVL from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal; the datasheet limits base current IB to -100 mA and peak base current IBM to -200 mA. |
| 2 | E | passive | Emitter terminal; the datasheet limits emitter-base voltage VEBO to -5 V. |
| 3 | C | passive | Collector terminal; the datasheet limits collector current IC to -800 mA and collector-emitter voltage VCEO to -45 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | -50 | V | open emitter | 2 | ||
| collector-emitter voltage | VCEO | -45 | V | open base | 2 | ||
| emitter-base voltage | VEBO | -5 | V | open collector | 2 | ||
| collector current | IC | -800 | mA | 2 | |||
| peak collector current | ICM | -1 | A | single pulse; tp ≤ 1 ms | 2 | ||
| base current | IB | -100 | mA | 2 | |||
| peak base current | IBM | -200 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation | Ptot | 250 | mW | Tamb ≤ 25 °C | 3 | ||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 500 | K/W | in free air | 3 | ||
| collector-base cut-off current | ICBO | -20 | nA | VCB = -40 V; IE = 0 A | 4 | ||
| collector-base cut-off current at Tj 150 °C | ICBO | -5 | μA | VCB = -40 V; IE = 0 A; Tj = 150 °C | 4 | ||
| emitter-base cut-off current | IEBO | -20 | nA | VEB = -5 V; IC = 0 A | 4 | ||
| DC current gain | hFE | 100 | VCE = -1 V; IC = -100 μA | 4 | |||
| DC current gain | hFE | 160 | 400 | VCE = -1 V; IC = -100 mA [1] | 4 | ||
| DC current gain | hFE | 60 | VCE = -2 V; IC = -500 mA [1] | 4 | |||
| collector-emitter saturation voltage | VCEsat | -350 | mV | IC = -100 mA; IB = -10 mA [1] | 4 | ||
| collector-emitter saturation voltage | VCEsat | -450 | mV | IC = -500 mA; IB = -50 mA [1] | 4 | ||
| base-emitter saturation voltage | VBEsat | -1.25 | V | IC = -100 mA; IB = -10 mA [1] | 4 | ||
| transition frequency | fT | 80 | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz | 4 |
CAD (KiCad official)
- Symbol:
BCW68GVL - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bcw68gvl-etched.step/bcw68gvl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcw68gvl.step/bcw68gvl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (13 pp, sha256
34d738ff19de3deb, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).