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Contents

README

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BCW68GVL

Nexperia · Bipolar Transistors - BJT · SOT-23

BCW68GVL from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal; the datasheet limits base current IB to -100 mA and peak base current IBM to -200 mA.
2 E passive Emitter terminal; the datasheet limits emitter-base voltage VEBO to -5 V.
3 C passive Collector terminal; the datasheet limits collector current IC to -800 mA and collector-emitter voltage VCEO to -45 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO -50 V open emitter 2
collector-emitter voltage VCEO -45 V open base 2
emitter-base voltage VEBO -5 V open collector 2
collector current IC -800 mA 2
peak collector current ICM -1 A single pulse; tp ≤ 1 ms 2
base current IB -100 mA 2
peak base current IBM -200 mA single pulse; tp ≤ 1 ms 3
total power dissipation Ptot 250 mW Tamb ≤ 25 °C 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air 3
collector-base cut-off current ICBO -20 nA VCB = -40 V; IE = 0 A 4
collector-base cut-off current at Tj 150 °C ICBO -5 μA VCB = -40 V; IE = 0 A; Tj = 150 °C 4
emitter-base cut-off current IEBO -20 nA VEB = -5 V; IC = 0 A 4
DC current gain hFE 100 VCE = -1 V; IC = -100 μA 4
DC current gain hFE 160 400 VCE = -1 V; IC = -100 mA [1] 4
DC current gain hFE 60 VCE = -2 V; IC = -500 mA [1] 4
collector-emitter saturation voltage VCEsat -350 mV IC = -100 mA; IB = -10 mA [1] 4
collector-emitter saturation voltage VCEsat -450 mV IC = -500 mA; IB = -50 mA [1] 4
base-emitter saturation voltage VBEsat -1.25 V IC = -100 mA; IB = -10 mA [1] 4
transition frequency fT 80 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz 4

CAD (KiCad official)

  • Symbol: BCW68GVL
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw68gvl-etched.step / bcw68gvl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw68gvl.step / bcw68gvl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 34d738ff19de3deb, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF