component
BCW68GLT3G
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownBCW68GLT3G
onsemi · Bipolar Transistors - BJT · SOT-23
BCW68GLT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor (SOT-23 CASE 318 Style 6, pin 1); the datasheet gives VEBO of -5.0 Vdc maximum for the emitter-base junction. |
| 2 | EMITTER | passive | Emitter of the PNP transistor (SOT-23 CASE 318 Style 6, pin 2); the datasheet gives VEBO of -5.0 Vdc maximum. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor (SOT-23 CASE 318 Style 6, pin 3); the datasheet gives VCEO of -45 Vdc, VCBO of -60 Vdc and continuous IC of -800 mAdc maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -45 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | -60 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current - Continuous | IC | -800 | mAdc | 1 | |||
| Total Device Dissipation FR-5 Board | PD | 225 | mW | FR-5 board, TA = 25°C | 1 | ||
| Thermal Resistance Junction-to-Ambient (FR-5) | RθJA | 556 | °C/W | FR-5 board | 1 | ||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | Alumina substrate, TA = 25°C | 1 | ||
| Thermal Resistance Junction-to-Ambient (Alumina) | RθJA | 417 | °C/W | Alumina substrate | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | Vdc | IC = -10 mAdc, IB = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CES | -60 | Vdc | IC = -10 Adc, VEB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = -10 Adc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICES | -20 | nAdc | VCE = -45 Vdc, IE = 0 | 2 | ||
| Collector Cutoff Current | ICES | -10 | Adc | VCE = -45 Vdc, IB = 0, TA = 150°C | 2 | ||
| Emitter Cutoff Current | IEBO | -20 | nAdc | VEB = -4.0 Vdc, IC = 0 | 2 | ||
| DC Current Gain | hFE | 120 | 400 | IC = -10 mAdc, VCE = -1.0 Vdc | 2 | ||
| DC Current Gain | hFE | 160 | IC = -100 mAdc, VCE = -1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 60 | IC = -300 mAdc, VCE = -1.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -2 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 2 | ||
| Current-Gain - Bandwidth Product | fT | 100 | MHz | IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz | 2 | ||
| Output Capacitance | Cobo | 18 | pF | VCB = -10 Vdc, IE = 0, f = 1.0 MHz | 2 | ||
| Input Capacitance | Cibo | 105 | pF | VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz | 2 | ||
| Noise Figure | NF | 10 | dB | IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
BCW68GLT3G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.9 mm, terminals on the pads, 1.0 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
bcw68glt3g-etched.step/bcw68glt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcw68glt3g.step/bcw68glt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
31d88b6078f092c6, retrieved 2026-11-13, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).