# BCW68G

**Changjing** · Bipolar (BJT) · SOT-23

BCW68G from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with emitter-base breakdown V(BR)EBO of -5 V minimum and maximum VEBO of -5 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, rated for a maximum collector current IC of -800 mA and maximum emitter-base voltage VEBO of -5 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for VCEO of -45 V, VCBO of -60 V and collector power dissipation PC of 330 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain hFE1 (rank G) | hFE1 | 50 |  |  |  | VCE=-10V, IC=-0.1mA | 1 |
| DC current gain hFE2 (rank G) | hFE2 | 120 |  |  |  | VCE=-1V, IC=-10mA | 1 |
| DC current gain hFE3 (rank G) | hFE3 | 160 |  | 400 |  | VCE=-1V, IC=-100mA | 1 |
| DC current gain hFE4 (rank G) | hFE4 | 60 |  |  |  | VCE=-2V, IC=-500mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.3 | V | IC=-100mA, IB=-10mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.7 | V | IC=-500mA, IB=-50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1.25 | V | IC=-100mA, IB=-10mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -2 | V | IC=-500mA, IB=-50mA | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -60 |  |  | V | IC=-10μA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -45 |  |  | V | IC=-10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-10μA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | -0.02 | μA | VCB=-45 V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | -0.02 | μA | VEB=-4 V, IC=0 | 1 |
| Transition frequency | fT | 200 |  |  | MHz | VCE=-5V, IC=-50mA, f=20MHz | 1 |
| Output capacitance | Cob |  |  | 6 | pF | VCB=-10V, IE=0, f=1MHz | 1 |
| Input capacitance | Cib |  |  | 60 | pF | VEB=-0.5V, IE=0, f=1MHz | 1 |
| Collector-base voltage | VCBO |  |  | -60 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | -45 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | -5 | V |  | 1 |
| Collector current | IC |  |  | -800 | mA |  | 1 |
| Collector power dissipation | PC |  |  | 330 | mW |  | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction to ambient | RΘJA |  | 379 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `BCW68G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bcw68g-etched.step` / `bcw68g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcw68g.step` / `bcw68g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590235679612702720) (4 pp, sha256 `1400d6d09b4fe737`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bcw68g-datasheet.pdf)