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BCW68G-TP

Public Made by Adom

by adom

MCC(Micro Commercial Components) Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW68G-TP

MCC(Micro Commercial Components) · Bipolar Transistors - BJT · SOT-23

BCW68G-TP from MCC(Micro Commercial Components), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP small-signal transistor, rated for Continuous Base Current IB -100 mA and Peak Base Current IBM -200 mA.
2 EMITTER passive Emitter terminal of the PNP small-signal transistor, with Emitter-Base Voltage VEBO -5 V.
3 COLLECTOR passive Collector terminal of the PNP small-signal transistor, with Collector-Emitter Voltage VCEO -45 V and Continuous Collector Current IC -800 mA.

Key specifications

Parameter Value
Manufacturer MCC(Micro Commercial Components)
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -60 V 1
Collector-Emitter Voltage VCEO -45 V 1
Emitter-Base Voltage VEBO -5 V 1
Peak Collector Current ICM -1000 mA 1
Continuous Collector Current IC -800 mA 1
Continuous Base Current IB -100 mA 1
Peak Base Current IBM -200 mA 1
Power Dissipation PD 330 mW 1
Operating Junction Temperature Range -55 150 °C 1
Storage Temperature Range -55 150 °C 1
Thermal Resistance Junction to Ambient 285 °C/W Note 2 1
Thermal Resistance Junction to Soldering Point 215 °C/W 1
Collector-Base Cutoff Current ICBO -20 nA VCB=-45V, IE=0 2
Base-Emitter Saturation Voltage VBE(sat) -1.25 V IC=-100mA, IB=-10mA 2
Base-Emitter Saturation Voltage VBE(sat) -2 V IC=-500mA, IB=-50mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC=-100mA, IB=-10mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V IC=-500mA, IB=-50mA 2
Emitter-Base Capacitance CEB 60 pF VEB=-0.5V, f=1MHz 2
Collector-Base Capacitance CCB 6 pF VCB=-10V, f=1MHz 2
Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10µA, IE=0 2
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC=-10mA, IB=0 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA, IC=0 2
Emitter-Base Cutoff Current IEBO -20 nA VEB=-4V, IC=0 2
Collector-Base Cutoff Current at 150°C ICBO -20 µA VCB=-45V, IE=0, TA=150°C 2
DC Current Gain hFE(1) hFE(1) 50 VCE=-10V, IC=-100µA 2
DC Current Gain hFE(2) hFE(2) 120 VCE=-1V, IC=-10mA 2
DC Current Gain hFE(3) hFE(3) 160 250 400 VCE=-1V, IC=-100mA 2
DC Current Gain hFE(4) hFE(4) 60 VCE=-2V, IC=-500mA 2
Transition Frequency fT 200 MHz VCE=-5V, IC=-50mA, f=100MHz 2

CAD (KiCad official)

  • Symbol: BCW68G-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw68g-tp-etched.step / bcw68g-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw68g-tp.step / bcw68g-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC(Micro Commercial Components) datasheet (4 pp, sha256 b1c8c4dad34204f6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF