component
BCW68F
Public Made by Adomby adom
ST Semtech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCW68F
ST Semtech · Bipolar (BJT) · SOT-23
BCW68F from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; -VEBO max 5 V, base current -IB max 100 mA (peak 200 mA). |
| 2 | Emitter | passive | Emitter of the PNP transistor; -VEBO max 5 V relative to base. |
| 3 | Collector | passive | Collector of the PNP transistor; -VCEO 45 V, -VCBO 60 V, -IC max 800 mA (peak 1 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain, group F (at -VCE = 10 V, -IC = 100 µA) | hFE | 35 | at -VCE = 10 V, -IC = 100 µA | 2 | |||
| DC current gain, group F (at -VCE = 1 V, -IC = 10 mA) | hFE | 75 | at -VCE = 1 V, -IC = 10 mA | 2 | |||
| DC current gain, group F (at -VCE = 1 V, -IC = 100 mA) | hFE | 100 | at -VCE = 1 V, -IC = 100 mA | 2 | |||
| DC current gain, group F (at -VCE = 2 V, -IC = 500 mA) | hFE | 35 | at -VCE = 2 V, -IC = 500 mA | 2 | |||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 45 | V | at -IC = 10 mA | 2 | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 60 | V | at -IC = 10 µA | 2 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | V | at -IE = 10 µA | 2 | ||
| Collector Base Cutoff Current | -ICBO | 20 | nA | at -VCB = 45 V | 2 | ||
| Emitter Base Cutoff Current | -IEBO | 20 | nA | at -VEB = 4 V | 2 | ||
| Collector Emitter Saturation Voltage | -VCE(sat) | 0.3 | V | at -IC = 100 mA, -IB = 10 mA | 2 | ||
| Collector Emitter Saturation Voltage | -VCE(sat) | 0.7 | V | at -IC = 500 mA, -IB = 50 mA | 2 | ||
| Base Emitter Saturation Voltage | -VBE(sat) | 1.25 | V | at -IC = 100 mA, -IB = 10 mA | 2 | ||
| Base Emitter Saturation Voltage | -VBE(sat) | 2 | V | at -IC = 500 mA, -IB = 50 mA | 2 | ||
| Collector Base Voltage | -VCBO | 60 | V | Ta = 25 °C | 1 | ||
| Collector Emitter Voltage | -VCEO | 45 | V | Ta = 25 °C | 1 | ||
| Emitter Base Voltage | -VEBO | 5 | V | Ta = 25 °C | 1 | ||
| Collector Current | -IC | 800 | mA | Ta = 25 °C | 1 | ||
| Peak Collector Current | -ICM | 1 | A | Ta = 25 °C | 1 | ||
| Base Current | -IB | 100 | mA | Ta = 25 °C | 1 | ||
| Peak Base Current | -IBM | 200 | mA | Ta = 25 °C | 1 | ||
| Power Dissipation | Ptot | 200 | mW | Ta = 25 °C | 1 | ||
| Junction Temperature | Tj | 150 | °C | Ta = 25 °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | Ta = 25 °C | 1 |
CAD (KiCad official)
- Symbol:
BCW68F - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bcw68f-etched.step/bcw68f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcw68f.step/bcw68f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (2 pp, sha256
f18eeeee933563f5, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).