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BCW68

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW68

Changjing · Bipolar (BJT) · SOT-23

BCW68 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the emitter-base voltage rating VEBO is -5 V.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V at IE=-10 μA.
3 COLLECTOR passive Collector terminal of the PNP transistor; rated for VCEO of -45 V and collector current IC of -800 mA.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -60 V IC=-10μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -45 V IC=-10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10μA, IC=0 1
Collector cut-off current ICBO -0.02 μA VCB=-45 V, IE=0 1
Emitter cut-off current IEBO -0.02 μA VEB=-4 V, IC=0 1
DC current gain, rank F hFE1 35 VCE=-10V, IC=-0.1mA 1
DC current gain, rank G hFE1 50 VCE=-10V, IC=-0.1mA 1
DC current gain, rank H hFE1 80 VCE=-10V, IC=-0.1mA 1
DC current gain, rank F hFE2 75 VCE=-1V, IC=-10mA 1
DC current gain, rank G hFE2 120 VCE=-1V, IC=-10mA 1
DC current gain, rank H hFE2 180 VCE=-1V, IC=-10mA 1
DC current gain, rank F hFE3 100 250 VCE=-1V, IC=-100mA 1
DC current gain, rank G hFE3 160 400 VCE=-1V, IC=-100mA 1
DC current gain, rank H hFE3 250 630 VCE=-1V, IC=-100mA 1
DC current gain, rank G hFE4 60 VCE=-2V, IC=-500mA 1
DC current gain, rank H hFE4 100 VCE=-2V, IC=-500mA 1
Collector-emitter saturation voltage VCE(sat) -0.3 V IC=-100mA, IB=-10mA 1
Collector-emitter saturation voltage VCE(sat) -0.7 V IC=-500mA, IB=-50mA 1
Base-emitter saturation voltage VBE(sat) -1.25 V IC=-100mA, IB=-10mA 1
Base-emitter saturation voltage VBE(sat) -2 V IC=-500mA, IB=-50mA 1
Transition frequency fT 200 MHz VCE=-5V, IC=-50mA, f=20MHz 1
Output capacitance Cob 6 pF VCB=-10V, IE=0, f=1MHz 1
Input capacitance Cib 60 pF VEB=-0.5V, IE=0, f=1MHz 1
Collector-base voltage VCBO -60 V Ta=25℃ 1
Collector-emitter voltage VCEO -45 V Ta=25℃ 1
Emitter-base voltage VEBO -5 V Ta=25℃ 1
Collector current IC -800 mA Ta=25℃ 1
Collector power dissipation PC 330 mW Ta=25℃ 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance, junction to ambient RΘJA 379 ℃/W 1

CAD (KiCad official)

  • Symbol: BCW68
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw68-etched.step / bcw68-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw68.step / bcw68.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 1400d6d09b4fe737, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF