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Contents

README

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BCW66HTA

Diodes Incorporated · Bipolar (BJT) · SOT-23

BCW66HTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor, shown as the lower right pin in the datasheet's top-view pin-out.
2 E passive Emitter of the NPN transistor, shown as the upper right pin in the top-view pin-out; VEBO is rated 7V.
3 C passive Collector of the NPN transistor, the single pin on the opposite side of the package; VCEO is 45V, VCBO is 75V and continuous IC is 800mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCES 75 V IC = 10µA 3
Collector-Emitter Breakdown Voltage (base open) BVCEO 45 V ICEO = 10mA 3
Emitter-Base Breakdown Voltage BVEBO 7 V IEBO = 10µA 3
Collector-Emitter Cut-Off Current ICES 20 nA VCES = 45V 3
Collector-Emitter Cut-Off Current ICES 20 µA VCES = 45V, TA = +150°C 3
Emitter-Base Cut-Off Current IEBO 20 nA VEBO = 5.6V 3
Static Forward Current Transfer Ratio hFE 80 IC = 100µA, VCE = 10V 3
Static Forward Current Transfer Ratio hFE 180 IC = 10mA, VCE = 1V 3
Static Forward Current Transfer Ratio hFE 250 IC = 100mA, VCE = 1V 3
Static Forward Current Transfer Ratio hFE 100 IC = 500mA, VCE = 2V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.3 mV IC = 100mA, IB = 10mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.7 mV IC = 500mA, IB = 50mA 3
Base-Emitter Saturation Voltage VBE(sat) 2 V IC = 500mA, IB = 50mA 3
Transition Frequency fT 100 MHz IC = 20mA, VCE = 10V, f = 100MHz 3
Output Capacitance Cobo 8 12 pF VCB = 10V, f = 1MHz 3
Input Capacitance Cibo 80 pF VCB = -0.5V, f = 1MHz 3
Noise Figure N 2 10 dB IC = 0.2mA, VCE = 5V, RG = 1K 3
Turn-On Time ton 100 ns IC = 150mA, IB1 = -IB2 = 15mA 3
Turn-Off Time toff 400 ns RL = 150 3
Collector-Base Voltage VCBO 75 V 2
Collector-Emitter Voltage VCEO 45 V 2
Emitter-Base Voltage VEBO 7 V 2
Continuous Collector Current IC 800 mA 2
Peak Pulse Current ICM 1000 mA 2
Base Current IB 100 mA 2
Power Dissipation PD 310 mW Note 6: minimum recommended pad layout, 1oz copper, single-sided FR4 2
Power Dissipation PD 350 mW Note 7: 15mm X 15mm 1oz copper 2
Thermal Resistance, Junction to Ambient RθJA 403 C/W Note 6: minimum recommended pad layout, 1oz copper, single-sided FR4 2
Thermal Resistance, Junction to Ambient RθJA 357 C/W Note 7: 15mm X 15mm 1oz copper 2
Thermal Resistance, Junction to Leads RθJL 350 C/W Note 8: junction to solder-point (end of leads) 2
Operating and Storage Temperature Range TJ,TSTG -55 150 C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BCW66HTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw66hta-etched.step / bcw66hta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw66hta.step / bcw66hta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 56f7fa2de2580595, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF