component
BCW66HQTA
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownBCW66HQTA
Diodes Incorporated · Bipolar (BJT) · SOT-23
BCW66HQTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; drives the device with continuous base current rated up to IB = 100mA. |
| 2 | E | passive | Emitter of the NPN transistor; Emitter-Base voltage VEBO is rated 7V maximum. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 45V, VCBO 75V, continuous collector current IC 800mA, peak 1000mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCES | 75 | V | IC = 10µA | 3 | ||
| Collector-Emitter Breakdown Voltage (base open) | BVCEO | 45 | V | ICEO = 10mA | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IEBO = 10µA | 3 | ||
| Collector-Emitter Cut-Off Current | ICES | 20 | nA | VCES = 45V | 3 | ||
| Collector-Emitter Cut-Off Current | ICES | 20 | µA | VCES = 45V, TA = +150°C | 3 | ||
| Emitter-Base Cut-Off Current | IEBO | 20 | nA | VEBO = 5.6V | 3 | ||
| Static Forward Current Transfer Ratio | hFE | 80 | IC = 100µA, VCE = 10V | 3 | |||
| Static Forward Current Transfer Ratio | hFE | 180 | IC = 10mA, VCE = 1V | 3 | |||
| Static Forward Current Transfer Ratio | hFE | 250 | IC = 100mA, VCE = 1V | 3 | |||
| Static Forward Current Transfer Ratio | hFE | 100 | IC = 500mA, VCE = 2V | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | mV | IC = 100mA, IB = 10mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | mV | IC = 500mA, IB = 50mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 2 | V | IC = 500mA, IB = 50mA | 3 | ||
| Transition Frequency | fT | 100 | MHz | IC = 20mA, VCE = 10V, f = 100MHz | 3 | ||
| Output Capacitance | Cobo | 8 | 12 | pF | VCB = 10V, f = 1MHz | 3 | |
| Input Capacitance | Cibo | 80 | pF | VCB = -0.5V, f = 1MHz | 3 | ||
| Noise Figure | N | 2 | 10 | dB | IC = 0.2mA. VCE = 5V, RG = 1K | 3 | |
| Turn-On Time | ton | 100 | ns | IC = 150mA. IB1 = -IB2 = 15mA | 3 | ||
| Turn-Off Time | toff | 400 | ns | RL = 150 | 3 | ||
| Collector-Base Voltage | VCBO | 75 | V | @TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 45 | V | @TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 7 | V | @TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 800 | mA | @TA = +25°C | 2 | ||
| Peak Pulse Current | ICM | 1000 | mA | @TA = +25°C | 2 | ||
| Base Current | IB | 100 | mA | @TA = +25°C | 2 | ||
| Power Dissipation | PD | 310 | mW | Note 6: minimum recommended pad layout | 2 | ||
| Power Dissipation | PD | 350 | mW | Note 7: 15mm x 15mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 403 | C/W | Note 6: minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 357 | C/W | Note 7: 15mm x 15mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Leads | RθJL | 350 | C/W | Note 8: junction to solder-point | 2 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
BCW66HQTA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.9 mm, terminals on the pads, 1.0 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
bcw66hqta-etched.step/bcw66hqta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcw66hqta.step/bcw66hqta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (5 pp, sha256
56f7fa2de2580595, retrieved 2026-11-13, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).