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Contents

README

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BCW66H-TP

MCC(Micro Commercial Components) · Bipolar Transistors - BJT · SOT-23

BCW66H-TP from MCC(Micro Commercial Components), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal; continuous base current IB is rated 100 mA and peak base current IBM 200 mA.
2 EMITTER passive Emitter terminal; emitter-base voltage VEBO is rated 5 V.
3 COLLECTOR passive Collector terminal; collector-base voltage VCBO is 75 V, collector-emitter voltage VCEO is 45 V, and continuous collector current IC is 800 mA.

Key specifications

Parameter Value
Manufacturer MCC(Micro Commercial Components)
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 75 V 1
Collector-Emitter Voltage VCEO 45 V 1
Emitter-Base Voltage VEBO 5 V 1
Continuous Collector Current IC 800 mA 1
Peak Collector Current ICM 1000 mA 1
Continuous Base Current IB 100 mA 1
Peak Base Current IBM 200 mA 1
Power Dissipation PD 330 mW 1
Operating Junction Temperature Range -55 150 ℃ 1
Storage Temperature Range -55 150 ℃ 1
Thermal Resistance Junction to Ambient 285 ℃/W Note 2: mounted on FR-4 PCB 1
Thermal Resistance Junction to Soldering Point 215 ℃/W 1
Collector-Base Cutoff Current ICBO 20 nA VCB=45V, IE=0 2
Collector-Base Cutoff Current at 150°C ICBO 20 µA VCB=45V, IE=0, TA=150°C 2
Base-Emitter Saturation Voltage VBE(sat) 1.25 V IC=100mA, IB=10mA 2
Base-Emitter Saturation Voltage VBE(sat) 2 V IC=500mA, IB=50mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.7 V IC=500mA, IB=50mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC=100mA, IB=10mA 2
Emitter-Base Capacitance CEB 60 pF VEB=0.5V, f=1MHz 2
Collector-Base Capacitance CCB 6 pF VCB=10V, f=1MHz 2
DC Current Gain hFE(3) hFE(3) 250 630 VCE=1V, IC=100mA 2
DC Current Gain hFE(4) hFE(4) 100 VCE=2V, IC=500mA 2
DC Current Gain hFE(1) hFE(1) 80 VCE=10V, IC=100µA 2
DC Current Gain hFE(2) hFE(2) 180 VCE=1V, IC=10mA 2
Collector-Base Breakdown Voltage V(BR)CBO 75 V IC=10µA, IE=0 2
Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC=10mA, IB=0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µA, IC=0 2
Emitter-Base Cutoff Current IEBO 20 nA VEB=4V, IC=0 2
Transition Frequency fT 100 MHz VCE=10V, IC=20mA, f=100MHz 2

CAD (KiCad official)

  • Symbol: BCW66H-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw66h-tp-etched.step / bcw66h-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw66h-tp.step / bcw66h-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC(Micro Commercial Components) datasheet (4 pp, sha256 948413a58770cfe2, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF