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Contents

README

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BCW66GVL

Nexperia · Bipolar Transistors - BJT · SOT-23

BCW66GVL from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 B passive Base terminal; base current IB is limited to 100 mA and peak base current IBM to 200 mA (single pulse, tp ≤ 1 ms).
2 E passive Emitter terminal; emitter-base voltage VEBO is limited to 5 V.
3 C passive Collector terminal; collector current IC is limited to 800 mA (peak ICM 1 A) with VCEO 45 V and VCBO 50 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 50 V open emitter 2
collector-emitter voltage VCEO 45 V open base 2
emitter-base voltage VEBO 5 V open collector 2
collector current IC 800 mA 2
peak collector current ICM 1 A single pulse; tp ≤ 1 ms 2
base current IB 100 mA 2
peak base current IBM 200 mA single pulse; tp ≤ 1 ms 3
total power dissipation Ptot 250 mW Tamb ≤ 25 °C 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air 3
collector-base cut-off current ICBO 20 nA VCB = 40 V; IE = 0 A 4
collector-base cut-off current ICBO 5 μA VCB = 40 V; IE = 0 A; Tj = 150 °C 4
emitter-base cut-off current IEBO 20 nA VEB = 5 V; IC = 0 A 4
DC current gain hFE 75 VCE = 1 V; IC = 100 μA (BCW66F/G/H) 4
DC current gain hFE 160 400 VCE = 1 V; IC = 100 mA; pulsed tp ≤ 300 μs, δ ≤ 0.02 (BCW66G) 4
DC current gain hFE 40 VCE = 1 V; IC = 500 mA; pulsed tp ≤ 300 μs, δ ≤ 0.02 (BCW66F/G/H) 4
collector-emitter saturation voltage VCEsat 350 mV IC = 100 mA; IB = 10 mA; pulsed tp ≤ 300 μs, δ ≤ 0.02 4
collector-emitter saturation voltage VCEsat 450 mV IC = 500 mA; IB = 50 mA; pulsed tp ≤ 300 μs, δ ≤ 0.02 4
base-emitter saturation voltage VBEsat 1.25 V IC = 100 mA; IB = 10 mA; pulsed tp ≤ 300 μs, δ ≤ 0.02 4
transition frequency fT 100 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz 4

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: BCW66GVL
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.9 mm, terminals on the pads, 1.0 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: bcw66gvl-etched.step / bcw66gvl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw66gvl.step / bcw66gvl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 6a1bc1da706875ce, retrieved 2026-11-13, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF