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BCW66GLT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW66GLT1G

onsemi · Bipolar Transistors - BJT · SOT-23

BCW66GLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN general-purpose transistor; the datasheet's emitter-base ratings are VEBO 5.0 Vdc maximum, with emitter-base breakdown V(BR)EBO of at least 5.0 Vdc.
2 EMITTER passive Emitter terminal of the NPN general-purpose transistor; the datasheet specifies IEBO at VEB = 4.0 Vdc with a maximum of 20 nAdc.
3 COLLECTOR passive Collector terminal of the NPN general-purpose transistor; the datasheet rates VCEO at 45 Vdc, VCBO at 75 Vdc, and continuous collector current IC at 800 mAdc (1200 mAdc pulsed).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 45 Vdc IC = 10 mAdc, IB = 0 2
Collector-Emitter Breakdown Voltage V(BR)CES 75 Vdc IC = 10 Adc, VEB = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICES 20 nAdc VCE = 45 Vdc, IE = 0 2
Collector Cutoff Current ICES 20 Adc VCE = 45 Vdc, IE = 0, TA = 150°C 2
Emitter Cutoff Current IEBO 20 nAdc VEB = 4.0 Vdc, IC = 0 2
DC Current Gain hFE 50 IC = 100 Adc, VCE = 10 Vdc 2
DC Current Gain hFE 110 IC = 10 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 160 400 IC = 100 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 60 IC = 500 mAdc, VCE = 2.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.7 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 100 mAdc, IB = 10 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 2 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Current-Gain Bandwidth Product fT 100 MHz IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz 2
Output Capacitance Cobo 12 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 80 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Noise Figure NF 10 dB VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz 2
Turn-On Time ton 100 ns IB1 = IB2 = 15 mAdc 2
Turn-Off Time toff 400 ns IC = 150 mAdc, RL = 150 2
Collector-Emitter Voltage VCEO 45 Vdc 1
Collector-Base Voltage VCBO 75 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current - Continuous IC 800 mAdc 1
Collector Current - Pulsed IC 1200 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient RJA 417 °C/W Alumina Substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: BCW66GLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw66glt1g-etched.step / bcw66glt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw66glt1g.step / bcw66glt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 693d03cf7bad34b5, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF