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BCW66FR

Public Made by Adom

by adom

Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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BCW66FR

Nexperia · Bipolar Transistors - BJT · SOT-23

BCW66FR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 5 V, IB max 100 mA (IBM 200 mA peak).
2 E passive Emitter of the NPN transistor.
3 C passive Collector of the NPN transistor; VCEO max 45 V, VCBO max 50 V, IC max 800 mA (ICM 1 A peak).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base cut-off current ICBO 20 nA VCB = 40 V; IE = 0 A 4
Collector-base cut-off current ICBO 5 μA VCB = 40 V; IE = 0 A; Tj = 150 °C 4
Emitter-base cut-off current IEBO 20 nA VEB = 5 V; IC = 0 A 4
DC current gain hFE 75 VCE = 1 V; IC = 100 μA 4
DC current gain (BCW66F) hFE 100 250 VCE = 1 V; IC = 100 mA; pulsed 4
DC current gain hFE 40 VCE = 1 V; IC = 500 mA; pulsed 4
Collector-emitter saturation voltage VCEsat 350 mV IC = 100 mA; IB = 10 mA; pulsed 4
Collector-emitter saturation voltage VCEsat 450 mV IC = 500 mA; IB = 50 mA; pulsed 4
Base-emitter saturation voltage VBEsat 1.25 V IC = 100 mA; IB = 10 mA; pulsed 4
Transition frequency fT 100 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz 4
Collector-base voltage VCBO 50 V open emitter 2
Collector-emitter voltage VCEO 45 V open base 2
Emitter-base voltage VEBO 5 V open collector 2
Collector current IC 800 mA 2
Peak collector current ICM 1 A single pulse; tp ≤ 1 ms 2
Base current IB 100 mA 2
Peak base current IBM 200 mA single pulse; tp ≤ 1 ms 3
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint 3
Collector capacitance Cc 3 pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz 4

CAD (KiCad official)

  • Symbol: BCW66FR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw66fr-etched.step / bcw66fr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw66fr.step / bcw66fr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 6a1bc1da706875ce, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF