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bcw66f

Public Made by Adom

by adom

Changjing Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorbcw66ffactory-2.0.0extractor-text
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Contents

README

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BCW66F

Changjing · Bipolar Transistors - BJT · SOT-23

BCW66F from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 5 V min and VEBO rating is 5 V.
2 EMITTER passive Emitter of the NPN transistor; maximum collector current IC is 800 mA.
3 COLLECTOR passive Collector of the NPN transistor; VCBO is 75 V and VCEO is 45 V maximum.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 75 V IC=10μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 45 V IC=10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE=10μA, IC=0 1
Collector cut-off current ICBO 0.02 μA VCB=45 V, IE=0 1
Emitter cut-off current IEBO 0.02 μA VEB=4 V, IC=0 1
DC current gain hFE1 hFE1 35 VCE=10V, IC=0.1mA, BCW66F 1
DC current gain hFE2 hFE2 75 VCE=1V, IC=10mA, BCW66F 1
DC current gain hFE3 hFE3 100 250 VCE=1V, IC=100mA, BCW66F 1
DC current gain hFE4 hFE4 35 VCE=2V, IC=500mA, BCW66F 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=100mA, IB=10mA 1
Collector-emitter saturation voltage VCE(sat) 0.7 V IC=500mA, IB=50mA 1
Base-emitter saturation voltage VBE(sat) 2 V IC=500mA, IB=50mA 1
Transition frequency fT 100 MHz VCE=10V, IC=20mA, f=100MHz 1
Output capacitance Cob 12 pF VCB=10V, IE=0, f=1MHz 1
Input capacitance Cib 80 pF VEB=0.5V, IE=0, f=1MHz 1
Noise figure NF 10 dB VCE=5V, IC=0.2mA, f=1KHz, Rs=1KΩ, BW=200Hz 1
Collector-Base Voltage VCBO 75 V Ta=25℃ 1
Collector-Emitter Voltage VCEO 45 V Ta=25℃ 1
Emitter-Base Voltage VEBO 5 V Ta=25℃ 1
Collector Current IC 800 mA Ta=25℃ 1
Collector Power Dissipation PC 200 mW Ta=25℃ 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ Ta=25℃ 1
Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W Ta=25℃ 1

CAD (KiCad official)

  • Symbol: BCW66F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw66f-etched.step / bcw66f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw66f.step / bcw66f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 5b3c72f7f38d7281, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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