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BCW65CLT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

BCW65CLT1G

onsemi · Bipolar Transistors - BJT · SOT-23

BCW65CLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; emitter-base voltage is limited to 5.0 Vdc maximum (VEBO).
2 EMITTER passive Emitter of the NPN transistor, the reference terminal for VCE and VBE; collector current is rated 800 mAdc continuous.
3 COLLECTOR passive Collector of the NPN transistor; VCEO is 32 Vdc and VCBO is 60 Vdc maximum, with 800 mAdc continuous collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 32 Vdc 1
Collector-Base Voltage VCBO 60 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current - Continuous IC 800 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 board, TA = 25°C 1
Derating above 25°C FR-5 PD 1.8 mW/°C Derate above 25°C 1
Thermal Resistance Junction-to-Ambient FR-5 RθJA 556 °C/W FR-5 board 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina substrate, TA = 25°C 1
Derating above 25°C Alumina PD 2.4 mW/°C Derate above 25°C 1
Thermal Resistance Junction-to-Ambient Alumina RθJA 417 °C/W Alumina substrate 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Collector-Emitter Breakdown Voltage V(BR)CEO 32 Vdc IC = 10 mAdc, IB = 0 2
Collector-Emitter Breakdown Voltage V(BR)CES 60 Vdc IC = 10 µAdc, VEB = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 10 µAdc, IC = 0 2
Collector Cutoff Current ICES 20 nAdc VCE = 32 Vdc, IE = 0 2
Collector Cutoff Current ICES 20 µAdc VCE = 32 Vdc, IE = 0, TA = 150°C 2
Emitter Cutoff Current IEBO 20 nAdc VEB = 4.0 Vdc, IC = 0 2
DC Current Gain (BCW65CLT1) hFE 80 IC = 100 µAdc, VCE = 10 Vdc 2
DC Current Gain (BCW65CLT1) hFE 180 IC = 10 mAdc, VCE = 1.0 Vdc 2
DC Current Gain (BCW65CLT1) hFE 250 630 IC = 100 mAdc, VCE = 1.0 Vdc 2
DC Current Gain (BCW65CLT1) hFE 100 IC = 500 mAdc, VCE = 2.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.7 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 100 mAdc, IB = 10 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 2 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Current-Gain Bandwidth Product fT 100 MHz IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz 2
Output Capacitance Cobo 12 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 80 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Noise Figure NF 10 dB VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Turn-On Time ton 100 ns IB1 = IB2 = 15 mAdc 2
Turn-Off Time toff 400 ns IC = 150 mAdc, RL = 150 Ω 2

CAD (KiCad official)

  • Symbol: BCW65CLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw65clt1g-etched.step / bcw65clt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw65clt1g.step / bcw65clt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (3 pp, sha256 b986a6efc6ff1fd7, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF