BCW65ALT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base terminal of the NPN transistor; the datasheet gives an emitter-base breakdown voltage V(BR)EBO of 5.0 Vdc minimum.
2	EMITTER	passive	Emitter terminal of the NPN transistor; the absolute maximum emitter-base voltage VEBO is 5.0 Vdc.
3	COLLECTOR	passive	Collector terminal of the NPN transistor; the absolute maximum collector-emitter voltage VCEO is 32 Vdc and continuous collector current is 800 mAdc.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-23
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
hFE DC current gain (BCW65ALT1, min at IC=100 mAdc, VCE=1.0 Vdc)	hFE	100	250		IC = 100 mAdc, VCE = 1.0 Vdc	2
hFE DC current gain (BCW65ALT1)	hFE	35			IC = 100 Adc, VCE = 10 Vdc	2
hFE DC current gain (BCW65ALT1)	hFE	75			IC = 10 mAdc, VCE = 1.0 Vdc	2
Collector-Emitter Breakdown Voltage	V(BR)CEO	32		Vdc	IC = 10 mAdc, IB = 0	2
Collector-Emitter Breakdown Voltage	V(BR)CES	60		Vdc	IC = 10 Adc, VEB = 0	2
Emitter-Base Breakdown Voltage	V(BR)EBO	5		Vdc	IE = 10 Adc, IC = 0	2
Collector Cutoff Current	ICES		20	nAdc	VCE = 32 Vdc, IE = 0	2
Collector Cutoff Current	ICES		20	Adc	VCE = 32 Vdc, IE = 0, TA = 150C	2
Emitter Cutoff Current	IEBO		20	nAdc	VEB = 4.0 Vdc, IC = 0	2
Collector-Emitter Saturation Voltage	VCE(sat)		0.7	Vdc	IC = 500 mAdc, IB = 50 mAdc	2
Collector-Emitter Saturation Voltage	VCE(sat)		0.3	Vdc	IC = 100 mAdc, IB = 10 mAdc	2
Base-Emitter Saturation Voltage	VBE(sat)		2	Vdc	IC = 500 mAdc, IB = 50 mAdc	2
Current-Gain Bandwidth Product	fT	100		MHz	IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz	2
Output Capacitance	Cobo		12	pF	VCB = 10 Vdc, IE = 0, f = 1.0 MHz	2
Input Capacitance	Cibo		80	pF	VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz	2
Noise Figure	NF		10	dB	VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz	2
Turn-On Time	ton		100	ns	IB1 = IB2 = 15 mAdc	2
Turn-Off Time	toff		400	ns	IC = 150 mAdc, RL = 150	2
Collector-Emitter Voltage	VCEO		32	Vdc		1
Collector-Base Voltage	VCBO		60	Vdc		1
Emitter-Base Voltage	VEBO		5	Vdc		1
Collector Current - Continuous	IC		800	mAdc		1
Junction and Storage Temperature	TJ, Tstg	-55	150	C		1
Total Device Dissipation FR-5 Board	PD		225	mW	TA = 25C, FR-5 board (Note 1); derate above 25C 1.8 mW/C	1
Thermal Resistance, Junction-to-Ambient (FR-5 Board)	RJA		556	C/W	FR-5 board (Note 1)	1
Total Device Dissipation Alumina Substrate	PD		300	mW	TA = 25C, alumina substrate (Note 2); derate above 25C 2.4 mW/C	1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate)	RJA		417	C/W	Alumina substrate (Note 2)	1

CAD (KiCad official)

Symbol: BCW65ALT1G
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: bcw65alt1g-etched.step / bcw65alt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw65alt1g.step / bcw65alt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (5 pp, sha256 8f026892d687966b, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BCW65ALT1G

Verified BCW65ALT1G

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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