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BCW61D-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW61D-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

BCW61D-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; drive current for IC up to -0.1A, with VCE(sat) max -0.5V at IC=-100mA, IB=-5mA.
2 E passive Emitter of the PNP transistor; emitter-base voltage rated -5V (VEBO).
3 C passive Collector of the PNP transistor; VCEO -45V, VCBO -50V, continuous collector current -0.1A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage VCBO -50 V IC -10ȝA, IE 0 1
Collector-emitter breakdown voltage VCEO -45 V IC -10mA, IB 0 1
Emitter-base breakdown voltage VEBO -5 V IE -1ȝA, IC 0 1
Collector cut-off current ICBO -0.1 ȝA VCB -45V, IE 0 1
Emitter cut-off current IEBO -0.1 ȝA VEB -5 V, IC 0 1
DC current gain hFE 420 800 VCE -5V, IC -2mA 1
Collector-emitter saturation voltage VCE(sat) -0.5 V IC -100mA, IB -5 mA 1
Base-emitter saturation voltage VBE(sat) -1.1 V IC -100mA, IB -5mA 1
Collector capacitance Cob 4.5 pF VCB -10V, f 10H] 1
Collector-base voltage (absolute maximum) VCBO 50 V Ta=25°C unless otherwise noted 1
Collector-emitter voltage (absolute maximum) VCEO -45 V Ta=25°C unless otherwise noted 1
Emitter-base voltage (absolute maximum) VEBO -5 V Ta=25°C unless otherwise noted 1
Collector current-continuous (absolute maximum) IC -0.1 A Ta=25°C unless otherwise noted 1
Collector power dissipation (absolute maximum) PC 200 mW Ta=25°C unless otherwise noted 1
Junction temperature (absolute maximum) Tj 150 °C 1
Storage temperature Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BCW61D-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw61d-hxy-etched.step / bcw61d-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw61d-hxy.step / bcw61d-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 9081f82501dcf088, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF