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BCW61B

Nexperia · Bipolar Transistors - BJT · SOT-23

BCW61B from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 base passive Base terminal of the PNP transistor; the datasheet limits peak base current IBM to −100 mA.
2 emitter passive Emitter terminal of the PNP transistor; the datasheet limits emitter-base voltage VEBO to −5 V.
3 collector passive Collector terminal of the PNP transistor; the datasheet limits collector-emitter voltage VCEO to −32 V and DC collector current IC to −100 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO -32 V open emitter 3
collector-emitter voltage VCEO -32 V open base 3
emitter-base voltage VEBO -5 V open collector 3
collector current (DC) IC -100 mA 3
peak collector current ICM -200 mA 3
peak base current IBM -100 mA 3
total power dissipation Ptot 250 mW Tamb ≤ 25 °C; note 1 3
storage temperature Tstg -65 150 °C 3
junction temperature Tj 150 °C 3
operating ambient temperature Tamb -65 150 °C 3
collector cut-off current ICBO -20 nA IE = 0; VCB = −32 V 4
collector cut-off current ICBO -20 μA IE = 0; VCB = −32 V; Tamb = 150 °C 4
emitter cut-off current IEBO -20 nA IC = 0; VEB = −4 V 4
DC current gain hFE 30 IC = −10 μA; VCE = −5 V 4
DC current gain hFE 180 310 IC = −2 mA; VCE = −5 V 4
DC current gain hFE 80 IC = −50 mA; VCE = −1 V 4
collector-emitter saturation voltage VCEsat -60 -250 mV IC = −10 mA; IB = −0.25 mA 4
collector-emitter saturation voltage VCEsat -120 -550 mV IC = −50 mA; IB = −1.25 mA 4
base-emitter saturation voltage VBEsat -600 -850 mV IC = −10 mA; IB = −0.25 mA 4
base-emitter saturation voltage VBEsat -0.68 -1.05 V IC = −50 mA; IB = −1.25 mA 4
base-emitter voltage VBE -600 -650 -750 mV IC = −2 mA; VCE = −5 V 4
transition frequency fT 100 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz; note 1 4
noise figure F 2 6 dB IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4
thermal resistance junction to ambient Rth j-a 500 K/W note 1 4
base-emitter voltage VBE -550 mV IC = −10 μA; VCE = −5 V 4
base-emitter voltage VBE -720 mV IC = −50 mA; VCE = −1 V 4
collector capacitance Cc 4.5 pF IE = ie = 0; VCB = −10 V; f = 1 MHz 4
emitter capacitance Ce 11 pF IC = ic = 0; VEB = −0.5 V; f = 1 MHz 4

CAD (KiCad official)

  • Symbol: BCW61B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw61b-etched.step / bcw61b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw61b.step / bcw61b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 44f18ad0cd5d031d, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

Symbol & Footprint

Schematic Symbol

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PCB Footprint

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