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BCW60B

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW60B

Nexperia · Bipolar (BJT) · SOT-23

BCW60B from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN general-purpose transistor; peak base current is limited to 200 mA (IBM).
2 E passive Emitter terminal of the NPN general-purpose transistor; emitter-base voltage is limited to 5 V (VEBO).
3 C passive Collector terminal of the NPN general-purpose transistor; collector current is limited to 100 mA and collector-emitter voltage to 32 V (VCEO).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 32 V open emitter 2
Collector-emitter voltage VCEO 32 V open base 2
Emitter-base voltage VEBO 5 V open collector 2
Collector current IC 100 mA 2
Peak collector current ICM 200 mA 2
Peak base current IBM 200 mA 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB, single-sided copper, tin-plated, standard footprint 3
Collector-base cut-off current ICBO 20 nA VCB = 32 V; IE = 0 A; Tamb = 25 °C 4
Collector-base cut-off current ICBO 20 µA VCB = 32 V; IE = 0 A; Tamb = 150 °C 4
Emitter-base cut-off current IEBO 20 nA VEB = 4 V; IC = 0 A; Tamb = 25 °C 4
DC current gain hFE 20 VCE = 5 V; IC = 10 µA; Tamb = 25 °C 4
DC current gain hFE 180 310 VCE = 5 V; IC = 2 mA; Tamb = 25 °C 4
DC current gain hFE 70 VCE = 1 V; IC = 50 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat 50 350 mV IC = 10 mA; IB = 0.25 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat 100 550 mV IC = 50 mA; IB = 1.25 mA; Tamb = 25 °C 4
Base-emitter saturation voltage VBEsat 600 850 mV IC = 10 mA; IB = 0.25 mA; Tamb = 25 °C 4
Base-emitter saturation voltage VBEsat 0.7 1.05 V IC = 50 mA; IB = 1.25 mA; Tamb = 25 °C 4
Base-emitter voltage VBE 550 650 750 mV VCE = 5 V; IC = 2 mA; Tamb = 25 °C 4
Transition frequency fT 100 250 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 4
Noise figure NF 2 6 dB VCE = 5 V; IC = 200 µA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: BCW60B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw60b-etched.step / bcw60b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw60b.step / bcw60b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 0a636e3861ddc715, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF