component

BCW33LT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorbcw33lt1gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

BCW33LT1G

onsemi · Bipolar Transistors - BJT · SOT-23-3

BCW33LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor, per the SOT-23 (TO-236) case 318-08 style 6 pin assignment.
2 EMITTER passive Emitter terminal of the NPN transistor, per the SOT-23 (TO-236) case 318-08 style 6 pin assignment; the device maximum emitter-base voltage VEBO is 5.0 Vdc.
3 COLLECTOR passive Collector terminal of the NPN transistor, per the SOT-23 (TO-236) case 318-08 style 6 pin assignment; the maximum collector-emitter voltage VCEO is 32 Vdc and continuous collector current IC is 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 32 Vdc 1
Collector-Base Voltage VCBO 32 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current - Continuous IC 100 mAdc 1
Collector-Emitter Breakdown Voltage V(BR)CEO 32 Vdc IC = 2.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 32 Vdc IC = 10 Adc, IB = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICBO 100 nAdc VCB = 32 Vdc, IE = 0 2
Collector Cutoff Current ICBO 10 Adc VCB = 32 Vdc, IE = 0, TA = 100°C 2
DC Current Gain hFE 420 800 IC = 2.0 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mAdc, IB = 0.5 mAdc 2
Base-Emitter On Voltage VBE(on) 0.55 0.7 Vdc IC = 2.0 mAdc, VCE = 5.0 Vdc 2
Output Capacitance Cobo 4 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Noise Figure NF 10 dB VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C, FR-5 Board (Note 1) 1
Thermal Resistance, Junction-to-Ambient FR-5 Board RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, Alumina Substrate (Note 2) 1
Thermal Resistance, Junction-to-Ambient Alumina Substrate RJA 417 °C/W Alumina Substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BCW33LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: bcw33lt1g-etched.step / bcw33lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw33lt1g.step / bcw33lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 3fb7ff59069fbe96, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF