# BCW33-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

BCW33-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet rates the emitter-base voltage VEBO at 6 V. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet lists emitter-base breakdown V(BR)EBO at 6 V minimum with IE=10µA. |
| 3 | C | passive | Collector of the NPN transistor; the datasheet rates VCBO at 50 V, VCEO at 45 V, and collector current IC at 100 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 50 |  |  | V | IC=10µA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 45 |  |  | V | IC=10mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE=10µA, IC=0 | 2 |
| Collector cut-off current | ICBO |  |  | 100 | nA | VCB=50V, IE=0 | 2 |
| Emitter cut-off current | IEBO |  |  | 100 | nA | VEB=5V, IC=0 | 2 |
| DC current gain | hFE | 420 |  | 800 |  | VCE=5V, IC=2mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.5 | V | IC=100mA, IB=5mA | 2 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.1 | V |  | 2 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=5V, IC=10mA, f=30MHz | 2 |
| Collector output capacitance | Cob |  |  | 4.5 | pF | VCB=10V, f=1MHz | 2 |
| Collector-base voltage | VCBO |  |  | 50 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | 45 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | 6 | V |  | 1 |
| Collector current | IC |  |  | 100 | mA |  | 1 |
| Collector power dissipation | PC |  |  | 625 | mW |  | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance from junction to ambient | RΘJA |  |  | 200 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `BCW33-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bcw33-hxy-etched.step` / `bcw33-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcw33-hxy.step` / `bcw33-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604444953841836032) (5 pp, sha256 `c79581c710ed73e9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bcw33-hxy-datasheet.pdf)