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BCW32

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Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW32

Nexperia · Bipolar Transistors - BJT · SOT-23

BCW32 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; collector-emitter voltage is rated 32 V (open base, IC = 2 mA) and emitter-base voltage max is 5 V (open collector).
2 E passive Emitter of the NPN transistor; collector current is rated 100 mA continuous and 200 mA peak.
3 C passive Collector of the NPN transistor; collector-base voltage max is 32 V (open emitter) and collector-emitter voltage max is 32 V (open base, IC = 2 mA).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 32 V open base; IC = 2 mA 2
Collector-base voltage VCBO 32 V open emitter 2
Emitter-base voltage VEBO 5 V open collector 2
Collector current IC 100 mA 2
Peak collector current ICM 200 mA 2
Peak base current IBM 200 mA 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air 2
Collector-base cut-off current ICBO 100 nA VCB = 32 V; IE = 0 A; Tj = 25 °C 3
Collector-base cut-off current ICBO 10 µA VCB = 32 V; IE = 0 A; Tj = 100 °C 3
Emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tj = 25 °C 3
DC current gain hFE 200 450 VCE = 5 V; IC = 2 mA; Tj = 25 °C 3
Collector-emitter saturation voltage VCEsat 120 250 mV IC = 10 mA; IB = 0.5 mA; Tj = 25 °C 3
Base-emitter voltage VBE 550 700 mV VCE = 5 V; IC = 2 mA; Tj = 25 °C 3
Transition frequency fT 100 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz; Tj = 25 °C 3
Noise figure NF 10 dB VCE = 5 V; IC = 200 µA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz; Tj = 25 °C 3
DC current gain hFE 330 VCE = 5 V; IC = 10 µA; Tj = 25 °C 3
Collector-emitter saturation voltage VCEsat 210 mV IC = 50 mA; IB = 2.5 mA; Tj = 25 °C 3
Base-emitter saturation voltage VBEsat 750 mV IC = 10 mA; IB = 0.5 mA; Tj = 25 °C 3
Base-emitter saturation voltage VBEsat 850 mV IC = 50 mA; IB = 2.5 mA; Tj = 25 °C 3
Collector capacitance Cc 2.5 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tj = 25 °C 3

CAD (KiCad official)

  • Symbol: BCW32
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw32-etched.step / bcw32-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw32.step / bcw32.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 e49f2194008f0b38, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF