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BCW31-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCW31-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

BCW31-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; limits are VEBO 6 V maximum and collector current IC up to 200 mA controlled by base drive.
2 E passive Emitter of the NPN transistor; emitter-base voltage VEBO is limited to 6 V.
3 C passive Collector of the NPN transistor, rated VCBO 60 V, VCEO 40 V and IC 200 mA, with 200 mW collector power dissipation.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 60 V Maximum Ratings, Ta=25°C 1
Collector-Emitter Voltage VCEO 40 V Maximum Ratings, Ta=25°C 1
Emitter-Base Voltage VEBO 6 V Maximum Ratings, Ta=25°C 1
Collector Current IC 200 mA Maximum Ratings, Ta=25°C 1
Collector Power Dissipation PC 200 mW Maximum Ratings, Ta=25°C 1
Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO 60 V IC=10µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10µA, IC=0 2
Collector cut-off current ICEX 50 nA VCE=30V, VEB(off)=3V 2
Collector cut-off current ICBO 100 nA VCB= 60V, IE=0 2
Emitter cut-off current IEBO 100 nA VEB=5V, IC=0 2
DC current gain hFE(1) hFE(1) 100 300 VCE=1V, IC=10mA 2
DC current gain hFE(2) hFE(2) 60 VCE=1V, IC=50mA 2
DC current gain hFE(3) hFE(3) 30 VCE=1V, IC=100mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50mA, IB=5mA 2
Base-emitter saturation voltage VBE(sat) 0.95 V IC=50mA, IB=5mA 2
Transition frequency fT 300 MHz VCE=20V, IC=10mA, f=100MHz 2
Delay time td 35 ns VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 2
Rise time tr 35 ns VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 2
Storage time ts 200 ns VCC=3V, IC=10mA, IB1=IB2=1mA 2
Fall time tf 50 ns VCC=3V, IC=10mA, IB1=IB2=1mA 2

CAD (KiCad official)

  • Symbol: BCW31-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw31-hxy-etched.step / bcw31-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw31-hxy.step / bcw31-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 6903f7b7ea0bbb85, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF