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BCW29-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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BCW29-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

BCW29-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; emitter-base voltage limited to -5 V (VEBO).
2 E passive Emitter of the PNP transistor; emitter-base voltage limited to -5 V (VEBO).
3 C passive Collector of the PNP transistor; VCBO and VCEO are -40 V and collector current is up to -200 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -40 V IC=-10μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -40 V IC= -1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10μA, IC=0 2
Collector cut-off current ICBO -100 nA VCB= -40 V, IE=0 2
Collector cut-off current ICEX -50 nA VCE=-30V, VBE(off)=-3V 2
Emitter cut-off current IEBO -100 nA VEB= -5V, IC=0 2
DC current gain hFE1 100 300 VCE=-1V, IC= -10mA 2
DC current gain hFE2 60 VCE= -1V, IC=-50mA 2
DC current gain hFE3 30 VCE= -2V, IC=-100mA 2
Collector-emitter saturation voltage VCE(sat)1 -0.3 V IC=-50mA, IB=-5mA 2
Base-emitter saturation voltage VBE(sat) -0.95 V IC= -50mA, IB=-5mA 2
Transition frequency fT 300 MHz VCE=-20V,IC=-10mA,f=100MHz 2
Delay time td 35 nS 2
Rise time tr 35 nS VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA 2
Storage time ts 225 nS 2
Fall time tf 75 nS VCC=-3V,IC=-10mA IB1=IB2=-1mA 2
Collector-base voltage VCBO -40 V 1
Collector-emitter voltage VCEO -40 V 1
Emitter-base voltage VEBO -5 V 1
Collector current IC -200 mA 1
Collector power dissipation PC 200 mW 1
Thermal resistance from junction to ambient RθJA 625 ℃/W 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: BCW29-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcw29-hxy-etched.step / bcw29-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcw29-hxy.step / bcw29-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 dc8a44c8aa1415b1, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF