component
BCW120N40M1
Public Made by Adomby adom
Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCW120N40M1
Bestirpower · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
BCW120N40M1 from Bestirpower, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; DC rating -10/+22 V to source, recommended operating drive -5/+18 V, with gate-source leakage of ±100 nA max. |
| 2 | D | passive | Drain; drain-to-source voltage rating is 1200 V, with 60 A continuous current at TC = 25℃ and 160 A pulsed. |
| 3 | S | passive | Source; power return of the SiC MOSFET, and the body diode carries 60 A continuous (160 A pulsed) from source to drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 1200 | V | TC = 25℃ | 1 | ||
| Gate to Source Voltage (DC) | VGS | -10 | 22 | V | DC | 1 | |
| Recommended Operation Gate Value | VGSop | -5 | 18 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | VGS=18V, TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 42 | A | VGS=18V, TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | Note 1 | 1 | ||
| Avalanche Energy | EAS | 1000 | mJ | VDD=100V,VGS=20V,L=2mH | 1 | ||
| Avalanche Current | IAV | 30 | A | VDD=100V,VGS=20V,L=2mH | 1 | ||
| Power Dissipation | PD | 375 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 260 | ℃ | 1/8" from case for 10 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.4 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 34 | ℃/W | 1 | |||
| Drain to Source Breakdown Voltage | BVDSS | 1200 | V | VGS = 0 V, ID = 1 mA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 100 | μA | VDS = 1200 V, VGS = 0 V | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS = 1200 V, VGS = 0 V, TJ = 175℃ | 1 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS = +22 V, VDS = 0 V | 1 | ||
| Gate-Source Leakage Current | IGSS | -100 | nA | VGS = -10 V, VDS = 0 V | 1 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4.5 | V | VGS = VDS, ID = 10 mA | 2 |
| Static Drain to Source On Resistance | RDS(on) | 40 | 56 | mΩ | VGS = 18 V, ID = 30 A | 2 | |
| Static Drain to Source On Resistance | RDS(on) | 51 | mΩ | VGS = 18 V, ID = 30 A, TJ = 175℃ | 2 | ||
| Static Drain to Source On Resistance | RDS(on) | 50 | mΩ | VGS = 15 V, ID = 30 A | 2 | ||
| Static Drain to Source On Resistance | RDS(on) | 53 | mΩ | VGS = 15 V, ID = 30 A, TJ = 150℃ | 2 | ||
| Static Drain to Source On Resistance | RDS(on) | 59 | mΩ | VGS = 15 V, ID = 30 A, TJ = 175℃ | 2 | ||
| Static Drain to Source On Resistance | RDS(on) | 40 | mΩ | VGS = 18 V, ID = 40 A | 2 | ||
| Static Drain to Source On Resistance | RDS(on) | 54 | mΩ | VGS = 18 V, ID = 40 A, TJ = 150℃ | 2 | ||
| Static Drain to Source On Resistance | RDS(on) | 58 | mΩ | VGS = 18 V, ID = 40 A, TJ = 175℃ | 2 | ||
| Transconductance | gfs | 15 | S | VDS = 20 V, ID = 30 A | 2 | ||
| Input Capacitance | Ciss | 1960 | pF | VDS = 800 V, VGS = 0V, f = 250 kHz | 2 | ||
| Output Capacitance | Coss | 125 | pF | VDS = 800 V, VGS = 0V, f = 250 kHz | 2 | ||
| Reverse Capacitance | Crss | 5 | pF | VDS = 800 V, VGS = 0V, f = 250 kHz | 2 | ||
| Stored Energy in Output Capacitance | Eoss | 50 | μJ | VDS = 0 V to 800 V, VGS = 0 V | 2 | ||
| Total Gate Charge | Qg(tot) | 109 | nC | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V | 2 | ||
| Gate to Source Charge | Qgs | 28 | nC | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V | 2 | ||
| Gate to Drain Miller Charge | Qgd | 35 | nC | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V | 2 | ||
| Internal Gate Resistance | RG | 3.5 | Ω | f = 1MHz, VAC=30mV | 2 | ||
| Maximum Continuous Diode Forward Current | IS | 60 | A | 2 | |||
| Maximum Pulsed Diode Forward Current | ISM | 160 | A | 2 | |||
| Diode Forward Voltage | VSD | 4.2 | V | VGS = -5 V, ISD = 30 A | 2 |
CAD (KiCad official)
- Symbol:
BCW120N40M1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
bcw120n40m1-etched.step/bcw120n40m1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcw120n40m1.step/bcw120n40m1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (10 pp, sha256
acf967244a20be4c, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).