component
BCW120N160W1
Public Made by Adomby adom
Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Controls the MOSFET channel. Recommended drive VGS = -5 V / +18 V; absolute maximum VGS = -8 V / +22 V. Threshold voltage VGS(th) = 2.0-4.0 V (typ 3.4 V) at ID=5 mA, TC=25\u00b0C. Internal gate resistance RG(int) = 10 \u03a9 typ."+ "description": "Gate. Controls the MOSFET channel. Recommended drive VGS = -5 V / +18 V; absolute maximum VGS = -8 V / +22 V. Threshold voltage VGS(th) = 2.0-4.0 V (typ 3.4 V) at ID=5 mA, TC=25°C. Internal gate resistance RG(int) = 10 Ω typ." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. High-voltage power terminal, connected internally to the exposed metal tab/heatsink. VDSS = 1200 V max, ID = 22 A at TC=25\u00b0C (16 A at TC=100\u00b0C), IDM (pulsed) = 58 A. Body diode: VSD ~3.7 V typ at 5 A, TJ=25\u00b0C."+ "description": "Drain. High-voltage power terminal, connected internally to the exposed metal tab/heatsink. VDSS = 1200 V max, ID = 22 A at TC=25°C (16 A at TC=100°C), IDM (pulsed) = 58 A. Body diode: VSD ~3.7 V typ at 5 A, TJ=25°C." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Return terminal for drain current and gate-drive reference. Static RDS(on) = 160 m\u03a9 typ (VGS=15 V) / 130 m\u03a9 typ (VGS=18 V) at ID=10 A, TC=25\u00b0C."+ "description": "Source. Return terminal for drain current and gate-drive reference. Static RDS(on) = 160 mΩ typ (VGS=15 V) / 130 mΩ typ (VGS=18 V) at ID=10 A, TC=25°C." } ], "provenance": {@@ -114,5 +114,8 @@ "docs/bcw120n160w1-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }