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bcw120n160w1: factory component page (tier=lcsc)

Ray ·7bf70243e4 ·1mo ago ·parent bfd8305
1 file changed +92−8
page.json+92−8
@@ -1,13 +1,102 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "bcw120n160w1",+  "title": "BCW120N160W1",+  "brief": "Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3L. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3L. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "silicon carbide (sic) devices",     "bcw120n160w1"   ],+  "component": {+    "mpn": "BCW120N160W1",+    "manufacturer": "Bestirpower",+    "package": "TO-247-3L",+    "pin_count": 3,+    "category": "Silicon Carbide (SiC) Devices",+    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",+    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/4a4b7d1cbf32a956f96b2f4fb247be98.pdf",+    "parts": {+      "symbol": "bcw120n160w1.kicad_sym",+      "footprint": "bcw120n160w1.kicad_mod",+      "model_3d": "bcw120n160w1.glb",+      "model_3d_step": "bcw120n160w1.step",+      "lbr": "bcw120n160w1.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Controls the MOSFET channel. Recommended drive VGS = -5 V / +18 V; absolute maximum VGS = -8 V / +22 V. Threshold voltage VGS(th) = 2.0-4.0 V (typ 3.4 V) at ID=5 mA, TC=25\u00b0C. Internal gate resistance RG(int) = 10 \u03a9 typ."+      },+      {+        "number": "2",+        "name": "D",+        "type": "passive",+        "description": "Drain. High-voltage power terminal, connected internally to the exposed metal tab/heatsink. VDSS = 1200 V max, ID = 22 A at TC=25\u00b0C (16 A at TC=100\u00b0C), IDM (pulsed) = 58 A. Body diode: VSD ~3.7 V typ at 5 A, TJ=25\u00b0C."+      },+      {+        "number": "3",+        "name": "S",+        "type": "passive",+        "description": "Source. Return terminal for drain current and gate-drive reference. Static RDS(on) = 160 m\u03a9 typ (VGS=15 V) / 130 m\u03a9 typ (VGS=18 V) at ID=10 A, TC=25\u00b0C."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://datasheet.lcsc.com/datasheet/pdf/4a4b7d1cbf32a956f96b2f4fb247be98.pdf",+        "pages": 8,+        "sha256": "f84e39beaeb8e160",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "Bestirpower",+      "Package": "TO-247-3L",+      "Category": "Silicon Carbide (SiC) Devices",+      "Pins": "3"+    }+  },+  "variants": [+    {+      "mpn": "BCW120N160W1",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "bcw120n160w1"+  ],+  "discovery_pitch": "BCW120N160W1 (Bestirpower) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +114,5 @@     "docs/bcw120n160w1-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file