BCW120N160W1

@@ -0,0 +1,44 @@+# BCW120N160W1++**Bestirpower** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L++BCW120N160W1 from Bestirpower, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate. Controls the MOSFET channel. Recommended drive VGS = -5 V / +18 V; absolute maximum VGS = -8 V / +22 V. Threshold voltage VGS(th) = 2.0-4.0 V (typ 3.4 V) at ID=5 mA, TC=25°C. Internal gate resistance RG(int) = 10 Ω typ. |+| 2 | D | passive | Drain. High-voltage power terminal, connected internally to the exposed metal tab/heatsink. VDSS = 1200 V max, ID = 22 A at TC=25°C (16 A at TC=100°C), IDM (pulsed) = 58 A. Body diode: VSD ~3.7 V typ at 5 A, TJ=25°C. |+| 3 | S | passive | Source. Return terminal for drain current and gate-drive reference. Static RDS(on) = 160 mΩ typ (VGS=15 V) / 130 mΩ typ (VGS=18 V) at ID=10 A, TC=25°C. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Bestirpower |+| Package | TO-247-3L |+| Category | Silicon Carbide (SiC) Devices |+| Pins | 3 |++## Ordering variants++Same part, different packaging or reel option.++- `BCW120N160W1`++## CAD (KiCad official)++- Symbol: `BCW120N160W1`+- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`+- 3D model: TO-247-3L (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Bestirpower datasheet](docs/bcw120n160w1-datasheet.pdf) (8 pp, sha256 `f84e39beaeb8e160`, retrieved 2026-08-17, tier: lcsc)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bcw120n160w1-datasheet.pdf)

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