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BCV62C

Public Made by Adom

by adom

Nexperia Bipolar Transistors - BJT, SOT-143. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCV62C

Nexperia · Bipolar Transistors - BJT · SOT-143

BCV62C from Nexperia, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C2/B1/B2 passive Collector of TR2 and common base of TR1 and TR2 (diode-connected TR2 for current mirror use); VCEO max −30 V, IC max −100 mA per transistor.
2 C1 passive Collector of TR1; VCEO max −30 V, IC max −100 mA, ICM max −200 mA.
3 E1 passive Emitter of TR1; emitter-base voltage VEBS max −6 V.
4 E2 passive Emitter of TR2; emitter-base voltage VEBS max −6 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-143
Category Transistors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -30 V open emitter 3
Collector-emitter voltage VCEO -30 V open base 3
Emitter-base voltage VEBS -6 V VCE = 0 V 3
Collector current IC -100 mA 3
Peak collector current ICM -200 mA 3
Peak base current IBM -200 mA 3
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C, device mounted on FR4 PCB 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air, device mounted on FR4 PCB 3
Collector-base cut-off current ICBO -15 nA VCB = −30 V; IE = 0 A (TR1) 3
Collector-base cut-off current ICBO -5 μA VCB = −30 V; IE = 0 A; Tj = 150 °C (TR1) 3
Emitter-base cut-off current IEBO -100 nA VEB = −5 V; IC = 0 A (TR1) 3
DC current gain TR1 hFE 100 VCE = −5 V; IC = −100 μA (TR1) 3
DC current gain TR1 hFE 100 800 VCE = −5 V; IC = −2 mA (TR1) 3
Collector-emitter saturation voltage VCEsat -75 -300 mV IC = −10 mA; IB = −0.5 mA (TR1) 3
Collector-emitter saturation voltage VCEsat -250 -650 mV IC = −100 mA; IB = −5 mA (TR1) 3
Base-emitter voltage VBE -600 -650 -750 mV IC = −2 mA; VCE = −5 V (TR1) 4
Base-emitter voltage VBE -820 mV IC = −10 mA; VCE = −5 V (TR1) 4
Transition frequency fT 100 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz (TR1) 4
Noise figure NF 10 dB VCE = −5 V; IC = −200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz (TR1) 4
Emitter-base voltage TR2 VEBS -1.5 V VCB = 0 V; IE = −250 mA (TR2) 4
Emitter-base voltage TR2 VEBS -400 mV VCB = 0 V; IE = −10 μA (TR2) 4
DC current gain TR2, BCV62C hFE 420 800 VCE = −5 V; IC = −2 mA (TR2) 4
Current matching IC1/IE2 0.7 1.3 IE2 = −0.5 mA; VCE1 = −5 V; Tamb ≤ 25 °C 4
Emitter current 2 IE2 -5 mA VCE1 = −5 V, device without emitter resistors, mounted on FR4 PCB 4
Base-emitter saturation voltage VBEsat -700 mV IC = −10 mA; IB = −0.5 mA (TR1) 4
Base-emitter saturation voltage VBEsat -850 mV IC = −100 mA; IB = −5 mA (TR1) 4
Collector capacitance Cc 4.5 pF VCB = −10 V; IE = ie = 0 A (TR1) 4

CAD (KiCad official)

  • Symbol: BCV62C
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143 (KiCad packages3D, STEP)
  • 3D model files: bcv62c-etched.step / bcv62c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcv62c.step / bcv62c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 44ac81ab782ed905, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF