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BCV62

Nexperia · Bipolar (BJT) · SOT-143

BCV62 from Nexperia, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C2/B1B2 passive Collector of TR2 and common base of TR1 and TR2; in the current-mirror test circuit this pin is tied to the TR2 collector/base node, with TR2 emitter current IE2 constant.
2 C1 passive Collector of TR1 (VCEO max −30 V, IC max −100 mA per transistor).
3 E1 passive Emitter of TR1.
4 E2 passive Emitter of TR2 (emitter current IE2 max −5 mA for current matching without emitter resistors).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-143
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -30 V open emitter 3
Collector-emitter voltage VCEO -30 V open base 3
Emitter-base voltage VEBS -6 V VCE = 0 V 3
Collector current IC -100 mA 3
Peak collector current ICM -200 mA 3
Peak base current IBM -200 mA 3
Total power dissipation (per device) Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB 3
Collector-base cut-off current (TR1) ICBO -15 nA VCB = −30 V; IE = 0 A 3
Collector-base cut-off current (TR1, hot) ICBO -5 μA VCB = −30 V; IE = 0 A; Tj = 150 °C 3
Emitter-base cut-off current (TR1) IEBO -100 nA VEB = −5 V; IC = 0 A 3
DC current gain (TR1) hFE 100 VCE = −5 V; IC = −100 μA 3
DC current gain (TR1) hFE 100 800 VCE = −5 V; IC = −2 mA 3
Collector-emitter saturation voltage (TR1) VCEsat -75 -300 mV IC = −10 mA; IB = −0.5 mA 3
Collector-emitter saturation voltage (TR1) VCEsat -250 -650 mV IC = −100 mA; IB = −5 mA 3
Base-emitter voltage (TR1) VBE -600 -650 -750 mV IC = −2 mA; VCE = −5 V 4
Base-emitter voltage (TR1) VBE -820 mV IC = −10 mA; VCE = −5 V 4
Transition frequency (TR1) fT 100 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz 4
Noise figure (TR1) NF 10 dB VCE = −5 V; IC = −200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4
Emitter-base voltage (TR2) VEBS -1.5 V VCB = 0 V; IE = −250 mA 4
Emitter-base voltage (TR2) -400 mV VCB = 0 V; IE = −10 μA 4
DC current gain (TR2, BCV62) hFE 100 800 VCE = −5 V; IC = −2 mA 4
Collector current matching IC1/IE2 IC1/IE2 0.7 1.3 IE2 = −0.5 mA; VCE1 = −5 V; Tamb ≤ 25 °C 4
Emitter current 2 (TR2) IE2 -5 mA VCE1 = −5 V; device without emitter resistors, mounted on FR4 PCB 4

CAD (KiCad official)

  • Symbol: BCV62
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143 (KiCad packages3D, STEP)
  • 3D model files: bcv62-etched.step / bcv62-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcv62.step / bcv62.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 44ac81ab782ed905, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF