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BCV61B

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-143. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCV61B

Nexperia · Bipolar (BJT) · SOT-143

BCV61B from Nexperia, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C2 / B1B2 passive Pinning table lists pin 1 as collector of TR2 and base of TR1 and TR2 (common base connection); the datasheet gives no separate voltage or current limit for this pin, and the per-transistor limits are VCEO 30 V and IC 100 mA.
2 C1 passive Collector of TR1; per-transistor limits are VCBO 30 V, VCEO 30 V and IC 100 mA (ICM 200 mA peak).
3 E1 passive Emitter of TR1; the datasheet gives VEBS 6 V maximum (VCE = 0 V) for the transistor.
4 E2 passive Emitter of TR2; the datasheet limits the emitter current IE2 to −5 mA maximum (VCE1 = 5 V, test condition).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-143
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 30 V open emitter 2
Collector-emitter voltage VCEO 30 V open base 2
Emitter-base voltage VEBS 6 V VCE = 0 V 2
Collector current IC 100 mA 2
Peak collector current ICM 200 mA 2
Peak base current IBM 200 mA 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB 3
Collector-base cut-off current ICBO 15 nA VCB = 30 V; IE = 0 A 3
Collector-base cut-off current ICBO 5 μA VCB = 30 V; IE = 0 A; Tj = 150 °C 3
Emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A 3
DC current gain hFE 100 VCE = 5 V; IC = 100 μA 3
DC current gain hFE 110 800 VCE = 5 V; IC = 2 mA 3
Collector-emitter saturation voltage VCEsat 90 250 mV IC = 10 mA; IB = 0.5 mA 3
Collector-emitter saturation voltage VCEsat 200 600 mV IC = 100 mA; IB = 5 mA 3
Base-emitter voltage VBE 580 660 700 mV IC = 2 mA; VCE = 5 V 3
Base-emitter voltage VBE 770 mV IC = 10 mA; VCE = 5 V 3
Transition frequency fT 100 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz 3
Noise figure NF 10 dB VCE = 5 V; IC = 200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 3
Emitter-base voltage VEBS -1.8 V VCB = 0 V; IE = −250 mA 4
Emitter-base voltage (second row, symbol not printed) -400 mV VCB = 0 V; IE = −10 μA 4
DC current gain (BCV61B) hFE 200 450 VCE = 5 V; IC = 2 mA 4
Current matching (Tamb ≤ 25 °C) IC1/IE2 0.7 1.3 IE2 = −0.5 mA; VCE1 = 5 V; Tamb ≤ 25 °C 4
Current matching (Tamb ≤ 150 °C) IC1/IE2 0.7 1.3 IE2 = −0.5 mA; VCE1 = 5 V; Tamb ≤ 150 °C 4
Emitter current 2 IE2 -5 mA VCE1 = 5 V 4

CAD (KiCad official)

  • Symbol: BCV61B
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143 (KiCad packages3D, STEP)
  • 3D model files: bcv61b-etched.step / bcv61b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcv61b.step / bcv61b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 56a3a237fbf07e27, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF