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BCT20N65

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baocheng Shandong Baocheng Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbct20n65factory-2.0.0extractor-text

Verified BCT20N65

by Ray · last 12 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

12 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BCT20N65 · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-fyuqdkfb/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • ✓package_fit: thickness within the datasheet's package drawing (vertical TO package); standing height not judged: the drawing read gives no overall height (H, H1 or L) (datasheet p.7)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 16 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bct20n65.kicad_sym✓ bct20n65.kicad_mod✓ bct20n65.step
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docs Publish 0.1.0 · Ray
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README.md Publish 0.1.0 · Ray
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray

BCT20N65

baocheng Shandong Baocheng Elec · MOSFETs · TO-220F

BCT20N65 from baocheng Shandong Baocheng Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGSS rated ±30 V and threshold VGS(th) of 2 V min to 4 V max at VDS=VGS, ID=0.25 mA.
2 D passive Drain; VDSS is 650 V and continuous drain current is 20 A at TC=25°C (12.5 A at 100°C), pulsed IDM 80 A.
3 S passive Source; continuous body-diode forward current IS is 20 A and pulsed 80 A.

Key specifications

Parameter Value
Manufacturer baocheng Shandong Baocheng Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=0.25 mA 2
Gate threshold voltage VGS(th) 2 4 V VDS=VGS, ID=0.25 mA 2
Drain cut-off current (Tj = 25°C) IDSS 1 μA VDS=650 V, VGS=0 V, Tj = 25°C 2
Drain cut-off current (Tj = 125°C) IDSS 100 μA VDS=650 V, VGS=0 V, Tj = 125°C 2
Gate leakage current, Forward IGSSF 100 nA VGS=30 V, VDS=0 V 2
Gate leakage current, Reverse IGSSR -100 nA VGS=-30 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 0.42 0.5 Ω VGS=10 V, ID=10A 2
Diode forward voltage VSD 1.5 V VGS=0 V, IF=20A 2
Drain-source voltage VDSS 650 V 1
Continuous drain current (TC = 25°C) ID 20 A TC = 25°C 1
Continuous drain current (TC = 100°C) ID 12.5 A TC = 100°C 1
Pulsed drain current IDM 80 A Pulse width limited by maximum junction temperature 1
Gate-source voltage VGSS -30 30 V 1
Avalanche energy, single pulse EAS 720 mJ L=10mH, IAS=12A, Starting Tj=25°C 1
Peak diode recovery dv/dt dv/dt 5 V/ns ISD = 20A, di/dt≤100A/us, VDD≤BVDS 1
Power dissipation TO-220F (TC = 25°C) PD 45 W TC = 25°C 1
Operating junction and storage temperature range TJ, TSTG -55 150 °C 1
Continuous diode forward current IS 20 A 1
Diode pulse current IS,pulse 80 A 1
Thermal resistance, Junction-to-case (TO-220F) RθJC 2.78 °C/W 1
Derate above 25°C (TO-220F) PD 0.36 W/°C Derate above 25°C 1
Thermal resistance, Junction-to-ambient (TO-220F) RθJA 62.5 °C/W 1
Input capacitance Ciss 2962 pF VDS=25V, VGS=0V, f = 1 MHz 2
Output capacitance Coss 266 pF VDS=25V, VGS=0V, f = 1 MHz 2
Reverse transfer capacitance Crss 18 pF VDS=25V, VGS=0V, f = 1 MHz 2
Turn-on delay time td(on) 18.8 ns VDD = 325 V, ID = 20A, RG = 10 Ω, VGS=15 V 2
Rise time tr 43.4 ns VDD = 325 V, ID = 20A, RG = 10 Ω, VGS=15 V 2
Turn-off delay time td(off) 98.2 ns VDD = 325 V, ID = 20A, RG = 10 Ω, VGS=15 V 2
Fall time tf 16.9 ns VDD = 325 V, ID = 20A, RG = 10 Ω, VGS=15 V 2
Gate to source charge Qgs 16.7 nC VDD=520 V, ID=20 A, VGS=0 to 10 V 2
Gate to drain charge Qgd 19.3 nC VDD=520 V, ID=20 A, VGS=0 to 10 V 2
Gate charge total Qg 58.3 nC VDD=520 V, ID=20 A, VGS=0 to 10 V 2
Gate plateau voltage Vplateau 5 V 2
Reverse recovery time trr 492.8 ns VR=325 V, IF=20A, dIF/dt=100 A/μs 2
Reverse recovery charge Qrr 7.46 μC VR=325 V, IF=20A, dIF/dt=100 A/μs 2
Peak reverse recovery current Irrm 30.3 A VR=325 V, IF=20A, dIF/dt=100 A/μs 2

CAD (KiCad official)

  • Symbol: BCT20N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: baocheng Shandong Baocheng Elec datasheet (7 pp, sha256 44adbd9bb216f0be, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF