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BCR133SH6327

Infineon Technologies · Digital Transistors · SOT-363

BCR133SH6327 from Infineon Technologies, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor TR1 (internally isolated transistor with built-in R1 = 10 kΩ, R2 = 10 kΩ bias resistors).
2 B1 input Base (input) of transistor TR1 with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ; Vi(fwd) max 40 V, Vi(rev) max 10 V.
3 C2 passive Collector of transistor TR2; VCEO max 50 V, IC max 100 mA.
4 E2 passive Emitter of transistor TR2 (internally isolated transistor with built-in R1 = 10 kΩ, R2 = 10 kΩ bias resistors).
5 B2 input Base (input) of transistor TR2 with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ; Vi(fwd) max 40 V, Vi(rev) max 10 V.
6 C1 passive Collector of transistor TR1; VCEO max 50 V, IC max 100 mA.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-363
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 50 V 2
Collector-base voltage VCBO 50 V 2
Input forward voltage Vi(fwd) 40 V 2
Input reverse voltage Vi(rev) 10 V 2
Collector current IC 100 mA 2
Total power dissipation Ptot 250 mW BCR133S, TS ≤ 115°C 2
Junction temperature Tj 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance junction - soldering point RthJS 140 K/W BCR133S 2
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 3
Collector-base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 3
Collector-base cutoff current ICBO 100 nA VCB = 40 V, IE = 0 3
Emitter-base cutoff current IEBO 0.75 mA VEB = 10 V, IC = 0 3
DC current gain hFE 30 - IC = 5 mA, VCE = 5 V 3
Collector-emitter saturation voltage VCEsat 0.3 V IC = 10 mA, IB = 0.5 mA 3
Input off voltage Vi(off) 0.8 1.5 V IC = 100 µA, VCE = 5 V 3
Input on voltage Vi(on) 1 2.5 V IC = 2 mA, VCE = 0.3 V 3
Input resistor R1 7 10 13 kΩ 3
Resistor ratio R1/R2 0.9 1 1.1 - 3
Transition frequency fT 130 MHz IC = 10 mA, VCE = 5 V, f = 100 MHz 3
Collector-base capacitance Ccb 3 pF VCB = 10 V, f = 1 MHz 3

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: BCR133SH6327
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363, generated on the KiCad land (body 1.25 x 2.1 mm, terminals on the pads, 0.9 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: bcr133sh6327-etched.step / bcr133sh6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcr133sh6327.step / bcr133sh6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 a0e46da93108444e, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF