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BCR108E6327HTSA1

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Infineon Technologies Digital Transistors, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCR108E6327HTSA1

Infineon Technologies · Digital Transistors · SOT-23-3

BCR108E6327HTSA1 from Infineon Technologies, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN digital transistor, with built-in bias resistor R1 = 2.2 kΩ (typ., range 1.5 to 2.9 kΩ) and R2 = 47 kΩ.
2 E passive Emitter terminal of the NPN digital transistor; the datasheet rates the collector current at 100 mA maximum and the collector-emitter voltage VCEO at 50 V maximum.
3 C passive Collector terminal of the NPN digital transistor; the total power dissipation is 200 mW for BCR108 with TS ≤ 102 °C, and the junction temperature limit is 150 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: BCR108E6327HTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: bcr108e6327htsa1-etched.step / bcr108e6327htsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcr108e6327htsa1.step / bcr108e6327htsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 3f210f43030b3ae4, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF