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BCR 562 E6327

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Infineon Technologies Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCR 562 E6327

Infineon Technologies · Digital Transistors · SOT-23

BCR 562 E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the digital transistor with built-in bias resistors R1 = 4.7 kΩ and R2 = 4.7 kΩ, with input forward voltage Vi(fwd) of 30 V and input reverse voltage Vi(rev) of 10 V stated as maximum ratings.
2 E passive Emitter terminal, with collector-emitter voltage VCEO rated at 50 V and storage temperature Tstg of -65 to 150 °C stated for the device.
3 C passive Collector terminal, with collector current IC rated at 500 mA maximum and collector-base voltage VCBO of 50 V stated for the device.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 2
Collector-base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 2
Collector-base cutoff current ICBO 100 nA VCB = 50 V, IE = 0 2
Emitter-base cutoff current IEBO 1.61 mA VEB = 10 V, IC = 0 2
DC current gain hFE 60 - IC = 50 mA, VCE = 5 V 2
Collector-emitter saturation voltage VCEsat 0.3 V IC = 50 mA, IB = 2.5 mA 2
Input off voltage Vi(off) 0.6 1.5 V IC = 100 µA, VCE = 5 V 2
Input on voltage Vi(on) 1 2.2 V IC = 10 mA, VCE = 0.3 V 2
Input resistor R1 3.2 4.7 6.2 kΩ 2
Resistor ratio R1/R2 0.9 1 1.1 - 2
Total power dissipation Ptot 330 mW TS ≤ 79 °C 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Collector-emitter voltage VCEO 50 V 1
Collector-base voltage VCBO 50 V 1
Input forward voltage Vi(fwd) 30 V 1
Input reverse voltage Vi(rev) 10 V 1
Collector current IC 500 mA 1
Junction - soldering point thermal resistance RthJS 215 K/W Junction - soldering point 1
Transition frequency fT 150 MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 2

CAD (KiCad official)

  • Symbol: BCR 562 E6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcr-562-e6327-etched.step / bcr-562-e6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcr-562-e6327.step / bcr-562-e6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (6 pp, sha256 750742e7156e2a89, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF