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BCR 523 E6327

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Infineon Technologies Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCR 523 E6327

Infineon Technologies · Digital Transistors · SOT-23

BCR 523 E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the internal NPN transistor, with a built-in bias resistor R1 = 1 kΩ (0.7 to 1.3 kΩ) and R2 = 10 kΩ; input on voltage Vi(on) is 0.4 to 1.4 V at IC = 10 mA, and maximum input reverse voltage Vi(rev) is 5 V.
2 E passive Emitter of the internal NPN transistor; the datasheet limits the collector-emitter voltage VCEO to 50 V and the collector current IC to 500 mA.
3 C passive Collector of the internal NPN transistor; the datasheet limits the collector-base voltage VCBO to 50 V, the input forward voltage Vi(fwd) to 12 V, and the collector current IC to 500 mA, with total power dissipation Ptot of 330 mW at TS ≤ 79 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 50 V 1
Collector-base voltage VCBO 50 V 1
Input forward voltage Vi(fwd) 12 V 1
Input reverse voltage Vi(rev) 5 V 1
Collector current IC 500 mA 1
Total power dissipation Ptot 330 mW TS ≤ 79 °C, BCR523 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Junction - soldering point thermal resistance RthJS 215 K/W BCR523 2
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 2
Collector-base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 2
Collector-base cutoff current ICBO 100 nA VCB = 50 V, IE = 0 2
Emitter-base cutoff current IEBO 0.72 mA VEB = 5 V, IC = 0 2
DC current gain hFE 70 - IC = 50 mA, VCE = 5 V 2
Collector-emitter saturation voltage VCEsat 0.3 V IC = 50 mA, IB = 2.5 mA 2
Input off voltage Vi(off) 0.3 1 V IC = 100 µA, VCE = 5 V 2
Input on voltage Vi(on) 0.4 1.4 V IC = 10 mA, VCE = 0.3 V 2
Input resistor R1 0.7 1 1.3 kΩ 2
Resistor ratio R1/R2 0.09 0.1 0.11 - 2

CAD (KiCad official)

  • Symbol: BCR 523 E6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcr-523-e6327-etched.step / bcr-523-e6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcr-523-e6327.step / bcr-523-e6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 99fbb07539c78d53, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF