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BCR 505 E6327

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Infineon Technologies Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCR 505 E6327

Infineon Technologies · Digital Transistors · SOT-23

BCR 505 E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN digital transistor, with built-in bias resistors R1 = 2.2 kΩ and R2 = 10 kΩ; input forward voltage Vi(fwd) is 20 V maximum and input reverse voltage Vi(rev) is 5 V maximum.
2 E passive Emitter terminal of the NPN transistor; device maximum ratings include collector-emitter voltage VCEO of 50 V and collector current IC of 500 mA.
3 C passive Collector terminal of the NPN transistor; collector-base voltage VCBO is 50 V and total power dissipation Ptot is 330 mW at TS ≤ 79 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 2
Collector-base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 2
Collector-base cutoff current ICBO 100 nA VCB = 50 V, IE = 0 2
Emitter-base cutoff current IEBO 0.65 mA VEB = 5 V, IC = 0 2
DC current gain hFE 70 - IC = 50 mA, VCE = 5 V 2
Collector-emitter saturation voltage VCEsat 0.3 V IC = 50 mA, IB = 2.5 mA 2
Input off voltage Vi(off) 0.4 1 V IC = 100 µA, VCE = 5 V 2
Input on voltage Vi(on) 0.5 1.4 V IC = 10 mA, VCE = 0.3 V 2
Input resistor R1 R1 1.5 2.2 2.9 kΩ 2
Resistor ratio R1/R2 R1/R2 0.19 0.22 0.24 - 2
Collector-emitter voltage VCEO 50 V 1
Collector-base voltage VCBO 50 V 1
Input forward voltage Vi(fwd) 20 1
Input reverse voltage Vi(rev) 5 1
Collector current IC 500 mA 1
Total power dissipation Ptot 330 mW TS ≤ 79 °C 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Junction - soldering point thermal resistance RthJS 215 K/W Junction - soldering point 1

CAD (KiCad official)

  • Symbol: BCR 505 E6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcr-505-e6327-etched.step / bcr-505-e6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcr-505-e6327.step / bcr-505-e6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (6 pp, sha256 dba340fa4ce9b5c3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF