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BCR 35PN H6327

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Infineon Technologies Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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BCR 35PN H6327

Infineon Technologies · Digital Transistors · SOT-363

BCR 35PN H6327 from Infineon Technologies, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of NPN transistor TR1; Vi(fwd) max 40 V, Vi(rev) max 6 V, IC max 100 mA for the transistor.
2 B1 input Base (input via built-in R1 = 10 kΩ, R2 = 47 kΩ bias network) of TR1; input forward voltage max 40 V, input reverse voltage max 6 V.
3 C2 passive Collector of PNP transistor TR2; VCEO 50 V, VCBO 50 V, IC max 100 mA.
4 E2 passive Emitter of PNP transistor TR2; Vi(fwd) max 40 V, Vi(rev) max 6 V, IC max 100 mA for the transistor.
5 B2 input Base (input via built-in R1 = 10 kΩ, R2 = 47 kΩ bias network) of TR2; input forward voltage max 40 V, input reverse voltage max 6 V.
6 C1 passive Collector of NPN transistor TR1; VCEO 50 V, VCBO 50 V, IC max 100 mA.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-363
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 2
Collector-base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 2
Collector cutoff current ICBO 100 nA VCB = 40 V, IE = 0 2
Emitter cutoff current IEBO 167 µA VEB = 6 V, IC = 0 2
DC current gain hFE 70 - IC = 5 mA, VCE = 5 V 2
Collector-emitter saturation voltage VCEsat 0.3 V IC = 10 mA, IB = 0.5 mA 2
Input off voltage Vi(off) 0.5 1 V IC = 100 µA, VCE = 5 V 2
Input on voltage Vi(on) 0.5 1.4 V IC = 2 mA, VCE = 0.3 V 2
Input resistor R1 7 10 13 kΩ 2
Resistor ratio R1/R2 0.19 0.21 0.24 - 2
Collector-emitter voltage VCEO 50 V 1
Collector-base voltage VCBO 50 V 1
Input forward voltage Vi(fwd) 40 V 1
Input reverse voltage Vi(rev) 6 V 1
DC collector current IC 100 mA 1
Total power dissipation Ptot 250 mW TS = 115 °C 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Thermal resistance junction - soldering point RthJS 140 K/W 1
Transition frequency fT 150 MHz IC = 10 mA, VCE = 5 V, f = 100 MHz 2
Collector-base capacitance Ccb 2 pF VCB = 10 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: BCR 35PN H6327
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bcr-35pn-h6327-etched.step / bcr-35pn-h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcr-35pn-h6327.step / bcr-35pn-h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (7 pp, sha256 74b2ea750a04b6b0, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF