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BCR 116 E6327

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Infineon Technologies Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCR 116 E6327

Infineon Technologies · Digital Transistors · SOT-23

BCR 116 E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base (input through built-in R1=4.7 kΩ bias resistor); input forward voltage max 30 V, input reverse voltage max 5 V.
2 E passive Emitter of the NPN digital transistor (R2=47 kΩ connected between base and emitter).
3 C passive Collector of the NPN digital transistor; VCEO 50 V, VCBO 50 V, IC max 100 mA.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 50 V 2
Collector-base voltage VCBO 50 V 2
Input forward voltage Vi(fwd) 30 V 2
Input reverse voltage Vi(rev) 5 V 2
Collector current IC 100 mA 2
Total power dissipation Ptot 200 mW BCR116, TS ≤ 102°C 2
Junction temperature Tj 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance junction - soldering point RthJS 240 K/W BCR116 2
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 3
Collector-base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 3
Collector-base cutoff current ICBO 100 nA VCB = 40 V, IE = 0 3
Emitter-base cutoff current IEBO 155 µA VEB = 5 V, IC = 0 3
DC current gain hFE 70 - IC = 5 mA, VCE = 5 V 3
Collector-emitter saturation voltage VCEsat 0.3 V IC = 10 mA, IB = 0.5 mA 3
Input off voltage Vi(off) 0.4 0.8 V IC = 100 µA, VCE = 5 V 3
Input on voltage Vi(on) 0.5 1.4 V IC = 2 mA, VCE = 0.3 V 3
Input resistor R1 3.2 4.7 6.2 kΩ 3
Resistor ratio R1/R2 0.09 0.1 0.11 - 3
Transition frequency fT 150 MHz IC = 10 mA, VCE = 5 V, f = 100 MHz 3
Collector-base capacitance Ccb 3 pF VCB = 10 V, f = 1 MHz 3

CAD (KiCad official)

  • Symbol: BCR 116 E6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcr-116-e6327-etched.step / bcr-116-e6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcr-116-e6327.step / bcr-116-e6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 7672851d1fb71731, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF