component
BCR 112 E6327
Public Made by Adomby adom
Infineon Technologies Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCR 112 E6327
Infineon Technologies · Digital Transistors · SOT-23
BCR 112 E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base (input) of the NPN digital transistor with built-in R1=4.7kΩ bias resistor; input forward voltage max 30 V, input reverse voltage max 10 V. |
| 2 | E | passive | Emitter of the NPN digital transistor, connected via R2=4.7kΩ to the base; typically tied to ground. |
| 3 | C | passive | Collector (output) of the NPN digital transistor; VCEO max 50 V, VCBO max 50 V, IC max 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 50 | V | 1 | |||
| Collector-base voltage | VCBO | 50 | V | 1 | |||
| Input forward voltage | Vi(fwd) | 30 | V | 1 | |||
| Input reverse voltage | Vi(rev) | 10 | V | 1 | |||
| Collector current | IC | 100 | mA | 1 | |||
| Total power dissipation | Ptot | 200 | mW | BCR112, TS ≤102°C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 1 | ||
| Thermal resistance junction - soldering point | RthJS | 240 | K/W | BCR112 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC = 100 µA, IB = 0 | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 10 µA, IE = 0 | 2 | ||
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 40 V, IE = 0 | 2 | ||
| Emitter-base cutoff current | IEBO | 1.61 | mA | VEB = 10 V, IC = 0 | 2 | ||
| DC current gain | hFE | 20 | - | IC = 5 mA, VCE = 5 V | 2 | ||
| Collector-emitter saturation voltage | VCEsat | 0.3 | V | IC = 10 mA, IB = 0.5 mA | 2 | ||
| Input off voltage | Vi(off) | 0.8 | 1.5 | V | IC = 100 µA, VCE = 5 V | 2 | |
| Input on voltage | Vi(on) | 1 | 2.5 | V | IC = 2 mA, VCE = 0.3 V | 2 | |
| Input resistor | R1 | 3.2 | 4.7 | 6.2 | kΩ | 2 | |
| Resistor ratio | R1/R2 | 0.9 | 1 | 1.1 | - | 2 | |
| Transition frequency | fT | 140 | MHz | IC = 10 mA, VCE = 5 V, f = 100 MHz | 2 | ||
| Collector-base capacitance | Ccb | 3 | pF | VCB = 10 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
BCR 112 E6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bcr-112-e6327-etched.step/bcr-112-e6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcr-112-e6327.step/bcr-112-e6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
bcb6bb2db72ed66d, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).