component

BCR 108W H6327

Public Made by Adom

by adom

Infineon Technologies Digital Transistors, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsbcr 108w h6327factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
bcr-108w-h6327 / README.md
History Download
Ray Publish 0.1.0 e189254 13d ago

BCR 108W H6327

Infineon Technologies · Digital Transistors · SOT-323-3

BCR 108W H6327 from Infineon Technologies, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base (input) through built-in R1=2.2 kΩ bias resistor; input forward voltage max 20 V, input reverse voltage max 5 V.
2 E passive Emitter of the NPN digital transistor, connected via R2=47 kΩ to the base network.
3 C passive Collector of the NPN digital transistor; VCEO 50 V, VCBO 50 V, IC max 100 mA.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-323-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 50 V 2
Collector-base voltage VCBO 50 V 2
Input forward voltage Vi(fwd) 20 V 2
Input reverse voltage Vi(rev) 5 V 2
Collector current IC 100 mA 2
Total power dissipation Ptot 250 mW BCR108W, TS ≤ 124°C 2
Junction temperature Tj 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance junction - soldering point RthJS 105 K/W BCR108W 2
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 3
Collector-base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 3
Collector-base cutoff current ICBO 100 nA VCB = 40 V, IE = 0 3
Emitter-base cutoff current IEBO 164 µA VEB = 5 V, IC = 0 3
DC current gain hFE 70 - IC = 5 mA, VCE = 5 V 3
Collector-emitter saturation voltage VCEsat 0.3 V IC = 10 mA, IB = 0.5 mA 3
Input off voltage Vi(off) 0.4 0.8 V IC = 100 µA, VCE = 5 V 3
Input on voltage Vi(on) 0.5 1.1 V IC = 2 mA, VCE = 0.3 V 3
Input resistor R1 1.5 2.2 2.9 kΩ 3
Resistor ratio R1/R2 0.042 0.047 0.052 - 3
Transition frequency fT 170 MHz IC = 10 mA, VCE = 5 V, f = 1 MHz 3
Collector-base capacitance Ccb 2 pF VCB = 10 V, f = 1 MHz 3

CAD (KiCad official)

  • Symbol: BCR 108W H6327
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: bcr-108w-h6327-etched.step / bcr-108w-h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcr-108w-h6327.step / bcr-108w-h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 3f210f43030b3ae4, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF