component
BCP56ST-16
Public Made by Adomby adom
PJSEMI Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| bcp56st-16-etched.glb | 12d ago |
| bcp56st-16-etched.step | 12d ago |
| bcp56st-16-hero.glb | 12d ago |
| bcp56st-16-hero.overlay.json | 12d ago |
| bcp56st-16.glb | 12d ago |
| bcp56st-16.kicad_mod | 12d ago |
| bcp56st-16.kicad_sym | 12d ago |
| bcp56st-16.lbr | 12d ago |
| bcp56st-16.step | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
BCP56ST-16
PJSEMI · Bipolar (BJT) · SOT-223
BCP56ST-16 from PJSEMI, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base of the NPN transistor; emitter-base voltage VEBO max 5 V. |
| 2 | Collector | passive | Collector of the NPN transistor; VCBO 100 V, VCEO 80 V, IC 1 A continuous and 1.5 A peak. |
| 3 | Emitter | passive | Emitter of the NPN transistor; current return for the collector and base currents. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (gain group -16) | HFE | 100 | 250 | VCE = 2 V, IC = 150 mA | 2 | ||
| Collector Base Cutoff Current | ICBO | 100 | nA | VCB = 30V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 100 | nA | VEB = 5 V | 2 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 100 | V | IC = 100 μA | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 80 | V | IC = 1 mA | 2 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | IE = 100 μA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC = 500 mA, IB = 50 mA | 2 | ||
| Base Emitter On Voltage | VBE(on) | 1 | V | VCE = 2 V, IC = 500 mA | 2 | ||
| Transition Frequency | fT | 100 | MHz | VCE = 5 V, IC = 50 mA, f = 100 MHz | 2 | ||
| Output Capacitance | Cob | 6 | pF | VCB = 10 V, f = 1 MHz | 2 | ||
| Collector Base Voltage | VCBO | 100 | V | 25℃ ambient | 1 | ||
| Collector Emitter Voltage | VCEO | 80 | V | 25℃ ambient | 1 | ||
| Emitter Base Voltage | VEBO | 5 | V | 25℃ ambient | 1 | ||
| Collector Current | IC | 1 | A | 25℃ ambient | 1 | ||
| Peak Collector Current | ICM | 1.5 | A | 25℃ ambient | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | 25℃ ambient | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
BCP56ST-16 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
bcp56st-16-etched.step/bcp56st-16-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcp56st-16.step/bcp56st-16.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (4 pp, sha256
06a160dcd600a6aa, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).